参数资料
| 型号： | SA5230DG |
| 厂商： | ON Semiconductor |
| 文件页数： | 12/18页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP LOW VOLTAGE 8-SOIC |
| 标准包装： | 98 |
| 放大器类型： | 通用 |
| 电路数： | 1 |
| 输出类型： | 满摆幅 |
| 转换速率： | 0.25 V/µs |
| 增益带宽积： | 600kHz |
| 电流 - 输入偏压： | 40nA |
| 电压 - 输入偏移： | 400µV |
| 电流 - 电源： | 1.1mA |
| 电流 - 输出 / 通道： | 32mA |
| 电压 - 电源，单路/双路(±)： | 1.8 V ~ 15 V，±0.9 V ~ 7.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
NE5230, SA5230, SE5230
http://onsemi.com
3
DC AND AC ELECTRICAL CHARACTERISTIC Unless otherwise specified, ±0.9V ≤ Vs ≤ ±7.5 V or equivalent single supply,
RL = 10 kW, full input commonmode range, over full operating temperature range.
Characteristic
Symbol
Test Conditions
Bias
Min
Typ
Max
Unit
NE5230, SA5230
Offset Voltage
VOS
TA = 25°C
Any
0.4
3.0
mV
TA = Tlow to Thigh
Any
3.0
4.0
Drift
VOS
Any
2.0
5.0
mV/°C
Offset Current
IOS
TA = 25°C
High
3.0
50
nA
Low
3.0
30
TA = Tlow to Thigh
High
100
Low
60
Drift
IOS
High
0.5
1.4
nA/°C
Low
0.3
1.4
Bias Current
IB
TA = 25°C
High
40
150
nA
Low
20
60
TA = Tlow to Thigh
High
200
Low
150
Drift
IB
High
2.0
4.0
nA/°C
Low
2.0
4.0
Supply Current
IS
VS = ±0.9 V
TA = 25°C
Low
110
160
mA
High
600
750
TA = Tlow to Thigh
Low
250
High
800
VS = ±7.5 V
TA = 25°C
Low
320
550
mA
High
1100
1600
TA = Tlow to Thigh
Low
600
High
1700
CommonMode Input Range
VCM
VOS ≤ 6 mV, TA = 25°C
Any
V 0.25
V+ + 0.25
V
VOS ≤ 6 mV, TA = Tlow to Thigh
Any
V
V+
CommonMode Rejection Ratio
CMRR
VS = ±7.5 V
RS = 10 kW; VCM = ±7.5 V;
TA = 25°C
Any
85
95
dB
RS = 10 kW; VCM = ±7.5 V;
TA = Tlow to Thigh
Any
80
Power Supply Rejection Ratio
PSRR
TA = 25°C
High
90
105
dB
Low
85
95
VOS v 6 mV, TA = Tlow to Thigh
High
75
Low
80
Load Current
Source
IL
VS = ±0.9 V; TA = 25°C
High
4.0
6
mA
Sink
VS = ±0.9 V; TA = 25°C
High
5.0
7
Source
VS = ±7.5 V; TA = 25°C
High
16
Sink
VS = ±7.5 V; TA = 25°C
High
32
Source
VS = ±0.9 V; TA = Tlow to Thigh
Any
1.0
5
Sink
VS = ±0.9 V; TA = Tlow to Thigh
Any
2.0
6
Source
VS = ±7.5 V; TA = Tlow to Thigh
Any
4.0
10
Sink
VS = ±7.5 V; TA = Tlow to Thigh
Any
5.0
15
For NE5230 devices, Tlow = 0°C and Thigh = +70°C. For SA5230 devices, Tlow = 40°C and Thigh = +85°C.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SA5230DR2 | 功能描述:运算放大器 - 运放 1.8V Single Rail to RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| SA5230DR2G | 功能描述:运算放大器 - 运放 1.8V Single Rail to Rail Industrial Temp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| SA5230FE | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Low voltage operational amplifier |
| SA5230N | 功能描述:运算放大器 - 运放 1.8V Single Rail to RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| SA5230NG | 功能描述:运算放大器 - 运放 1.8V Single Rail to Rail Industrial Temp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
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