参数资料
型号: SB1100T26A
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
文件页数: 1/3页
文件大小: 43K
代理商: SB1100T26A
SB120-SB1
100
SB120-SB1100, Rev. C
2001 Fairchild Semiconductor Corporation
SB120 - SB1100
Schottky Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
1.25
W
RθJA
Thermal Resistance, Junction to Ambient
80
°C/W
Features
1.0 ampere operation at T
A
= 75°C
with no thermal runaway.
For use in low voltage, high frequency
inverters free wheeling, and polarity
protection applications.
Symbol
Parameter
Device
Units
120
130
140
150
160
180
1100
VF
Forward Voltage @ 1.0 A
500
700
850
mV
I
R
Reverse Current @ rated V
R
T
A = 25°C
T
A = 100°C
0.5
10
mA
I
rr
Maximum Full Load Reverse Current, Full Cycle
T
A = 75°C
30
mA
C
T
Total Capacitance
V
R = 4.0 V, f = 1.0 MHz
110
pF
Symbol
Parameter
Value
Units
120
130
140
150
160
180
1100
V
RRM
Maximum Repetitive Reverse Voltage
20
30
40
50
60
80
100
V
I
F(AV)
Average Rectified Forward Current
.375 " lead length @ T
A = 75°C
1.0
A
I
FSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
30
A
T
stg
Storage Temperature Range
-65 to +125
°C
T
J
Operating Junction Temperature
-65 to +125
°C
Thermal Characteristics
DO-41
COLOR BAND DENOTES CATHODE
相关PDF资料
PDF描述
SB160 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41
SB130 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41
SB150 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
SB160 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41
SB150 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
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