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参数资料
| 型号： | SB1100T26A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 |
| 文件页数： | 2/3页 |
| 文件大小： | 43K |
| 代理商： | SB1100T26A |
SB120-SB1
100
SB120-SB1100, Rev. C
2001 Fairchild Semiconductor Corporation
Schottky Rectifier
(continued)
Typical Characteristics
0
20
406080
100
120
140
0
0.25
0.5
0.75
1
Lead Temperature [C]
Average
Rectified
Forward
Current,
I
F
[A]
SINGLE PHASE
HALF WAVE
60Hz
RESISTIVE OR
INDUCTIVE LOAD
.375" 9.5mm
LEAD LENGTHS
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.1
1
10
20
Forward Voltage, V
F [V]
Forward
Current,
I
F
[A]
SB120
SB150-SB160
SB1100
T = 25 C
Pulse Width = 300
S
1% Duty Cycle
J
0.1
0.5
1
5
10
40 60 100
10
20
40
60
80
100
200
400
Reverse Voltage, V
R [V]
Total
Capacitance,
C
T
[pF]
T = 25 C
J
12
4
6 8 10
20
40
60
100
0
6
12
18
24
30
Number of Cycles at 60Hz
Peak
Forward
Surge
Current,
I
FSM
[A]
Figure 1. Forward Current Derating Curve
Figure 2. Forward Voltage Characteristics
Figure 3. Non-Repetitive Surge Current
Figure 4. Total Capacitance
相关PDF资料 |
PDF描述 |
|---|---|
| SB160 | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41 |
| SB130 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| SB150 | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 |
| SB160 | 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41 |
| SB150 | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB1100-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A SCHOTTKY BARRIER DIODE |
| SB1100TA | 制造商:World Products 功能描述: |
| SB1100-TB | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A SCHOTTKY BARRIER DIODE |
| SB1100-TR | 制造商:LITEON-SEMI 功能描述:REVERSE VOLTAGE - 70 to 100 Volts, FORWARD CURRENT - 1.0 Ampere |
| SB11-04HP | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:40V, 1.1A Rectifier |
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