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参数资料
| 型号： | SB20H150CT-1E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 113K |
| 代理商： | SB20H150CT-1E3/45 |
MBR20H150CT, MBRF20H150CT & SB20H150CT-1
Vishay General Semiconductor
Document Number: 88864
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 A
FEATURES
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
150 V
IFSM
200 A
VF
0.75 V
TJ
175 °C
ITO-220AB
TO-262AA
MBR20H150CT
MBRF20H150CT
SB20H150CT-1
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
1
2
3
1
2
3
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR20H150CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
V
Working peak reverse voltage
VRWM
150
V
Maximum DC blocking voltage
VDC
150
V
Maximum average forward rectified current
total device
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
200
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
1.0
A
Peak non-repetitive reverse surge energy per diode (8/20 s waveform)
ERSM
10
mJ
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH
EAS
11.25
mJ
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
VAC
1500
V
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| MBRF20H90CTG-E3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF20H90CTG-HE3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB20H100CTG-HE3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB20H150CT-45 | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| SB20H200CT-1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| SB20H200CT-1E3/45 | 功能描述:肖特基二极管与整流器 200 Volt 20 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SB20J250E | 制造商:Ohmite Mfg Co 功能描述:Res Wirewound 250 Ohm 5% 20W ±260ppm/°C Silicone AXL |
| SB20M045 | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
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