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参数资料
| 型号： | SB20H150CT-1E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 113K |
| 代理商： | SB20H150CT-1E3/45 |
MBR20H150CT, MBRF20H150CT & SB20H150CT-1
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88864
Revision: 18-Apr-08
2
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward voltage
per diode (1)
IF = 10 A
IF = 20 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
VF
0.90
0.75
0.99
0.86
V
Maximum reverse current per diode
at working peak reverse voltage (1)
TJ = 25 °C
TJ = 125 °C
IR
5.0
1.0
A
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Typical thermal resistance per diode
RθJC
2.2
4.2
2.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR20H150CT-E3/45
2.06
45
50/tube
Tube
ITO-220AB
MBRF20H150CT-E3/45
2.20
45
50/tube
Tube
TO-262AA
SB20H150CT-1E3/45
1.58
45
50/tube
Tube
Figure 1. Forward Derating Curve (Total)
0
5
10
15
20
25
30
25
50
75
100
125
150
175
MBRF
MBR, MBRB
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
20
40
60
80
100
120
140
160
180
200
220
240
260
10
1
100
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
P
eak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相关PDF资料 |
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| MBRF20H35CT-E3 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20H50CT-E3 | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF20H90CTG-E3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF20H90CTG-HE3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB20H100CTG-HE3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB20H150CT-45 | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| SB20H200CT-1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| SB20H200CT-1E3/45 | 功能描述:肖特基二极管与整流器 200 Volt 20 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SB20J250E | 制造商:Ohmite Mfg Co 功能描述:Res Wirewound 250 Ohm 5% 20W ±260ppm/°C Silicone AXL |
| SB20M045 | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
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