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参数资料
| 型号： | SB20H150CT-1E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 113K |
| 代理商： | SB20H150CT-1E3/45 |
MBR20H150CT, MBRF20H150CT & SB20H150CT-1
Vishay General Semiconductor
Document Number: 88864
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0.1
0.3
0.2
0.4
0.6
0.8
1.0
0.5
0.7
0.9
1.1 1.2
100
10
0.1
1
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
T
J = 125 °C
T
J = 175 °C
T
J = 25 °C
T
J = 75 °C
0.1
0.01
1
10
100
1000
10 000
10
20
30
50
70
100
40
60
8090
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
T
J = 125 °C
T
J = 175 °C
T
J = 25 °C
T
J = 75 °C
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
10
1
100
1000
10 000
0.1
10
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
0.01
1
100
10
100
0.1
1
MBRF
MBR, MBRB
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
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PDF描述 |
|---|---|
| MBRF20H35CT-E3 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR20H50CT-E3 | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF20H90CTG-E3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF20H90CTG-HE3/45 | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRB20H100CTG-HE3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SB20H150CT-45 | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| SB20H200CT-1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier |
| SB20H200CT-1E3/45 | 功能描述:肖特基二极管与整流器 200 Volt 20 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SB20J250E | 制造商:Ohmite Mfg Co 功能描述:Res Wirewound 250 Ohm 5% 20W ±260ppm/°C Silicone AXL |
| SB20M045 | 制造商:JSMC 制造商全称:JILIN SINO-MICROELECTRONICS CO., LTD. 功能描述:SCHOTTKY BARRIER DIODE |
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