SB820 thru SB860
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
MECHANICAL DATA
Case : JEDEC DO-201AD molded plastic
Polarity : Color band denotes cathode
Weight : 0.04 ounces, 1.1 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
All Dimensions in millimeter
Max.
Min.
DO-201AD
Dim.
A
D
C
B
25.4
9.50
-
7.30
1.20
4.80
5.30
1.30
DO-201AD
A
C
D
A
B
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 20 to 60 Volts
FORWARD CURRENT - 8.0 Amperes
SEMICONDUCTOR
LITE-ON
REV. 5, Apr-2005, KDHF05
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
TSTG
-55 to +150
Storage Temperature Range
VRMS
VDC
VRRM
I(AV)
IFSM
VF
IR
CJ
8.0
175
0.70
1.0
50
TJ
-55 to +125
RθJL
10
SYMBOL
230
20
14
20
SB820
Maximum Average Forward
Rectified Current
@TL =90℃
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at IF=8.0A
Maximum DC Reverse Curren
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Operating Temperature Range
Typical Thermal Resistance (Note 2)
CHARACTERISTICS
@TJ= 25℃
@TJ= 100℃
0.55
15
290
30
21
30
SB830
40
28
40
SB840
45
31.5
45
SB845
50
35
50
SB850
60
42
60
SB860
mA
V
A
V
UNIT
C
pF
C/W
-55 to+150