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参数资料
| 型号： | SBE602 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.07 A, 30 V, SILICON, SIGNAL DIODE |
| 封装： | ULTRA SMALL, MCPH3, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 35K |
| 代理商： | SBE602 |
SBE602
No.8965-1/3
Ordering number : EN8965
O1806SB SY IM TC-00000234
SANYO Semiconductors
DATA SHEET
SBE602
Schottky Barrier Diode (Twin Type Cathode Common)
30V, 70mA Rectifier
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Applications
High frequency rectification (switching regulators, converters, choppers).
Features
Low forward voltage (VF max=0.55V).
Fast reverse recovery time (trr max=10ns).
Low switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Ultrasmall-sized package permitting SBE602-applied sets to be made small and slim.
Absolute Maximum Ratings at Ta=25
°C (Value per element)
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
30
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
35
V
Average Output Current
IO
70
mA
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
2
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25
°C (Value per element)
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Reverse Voltage
VR
IR=20A30
V
Forward Voltage
VF
IF=70mA
0.55
V
Reverse Current
IR1VR=2V
75
nA
IR2VR=15V
5.0
A
Interterminal Capacitance
C
VR=10V, f=1MHz
5.5
pF
Reverse Recovery Time
trr
IF=IR=10mA, See specified Test Circuit.
10
ns
Therrmal Resistance
Rth(j-a)
Mounted in Cu-foiled area of 0.72mm2!0.03mm
300
°C / W
on glass epoxy board
Marking : SQ
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| SBE803 | 0.2 A, 90 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| SBE818 | 1.5 A, 30 V, SILICON, RECTIFIER DIODE |
| SBG1045 | 10 A, 45 V, SILICON, RECTIFIER DIODE |
| SBG1030 | 10 A, 30 V, SILICON, RECTIFIER DIODE |
| SBG11100 | RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBE602-TL-E | 制造商:SANYO 功能描述:30V 0.07A 3MCPH Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:DIODE ARR 30V 0.07A SC-82 |
| SBE-640-CP-TT | 功能描述:IC 与器件插座 64P SIP SOCKET STRIP 150u" TIN/LEAD RoHS:否 制造商:Molex 产品:LGA Sockets 节距:1.02 mm 排数: 位置/触点数量:2011 触点电镀:Gold 安装风格:SMD/SMT 端接类型:Solder 插座/封装类型:LGA 2011 工作温度范围:- 40 C to + 100 C |
| SBE-640-E275-TG | 制造商:3M Electronic Products Division 功能描述:CONN SIP Socket SKT 64POS 2.54mm SCR |
| SBE-640-E275-TG30 | 制造商:3M Electronic Products Division 功能描述:Conn Socket Strip SKT 64 POS 2.54mm Solder ST Thru-Hole |
| SBE-640-E275-TT | 制造商:3M Electronic Products Division 功能描述:Conn Socket Strip SKT 64 POS 2.54mm Solder ST Thru-Hole |
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