参数资料
型号: SBR660CTT4G
厂商: ON Semiconductor
文件页数: 3/6页
文件大小: 100K
描述: DIODE SCHOTTKY 60V 3A DPAK
标准包装: 2,500
系列: SWITCHMODE™
电压 - 在 If 时为正向 (Vf)(最大): 700mV @ 3A
电流 - 在 Vr 时反向漏电: 100µA @ 60V
电流 - 平均整流 (Io)(每个二极管): 3A
电压 - (Vr)(最大): 60V
二极管类型: 肖特基
速度: *
二极管配置: 1 对共阴极
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: DPAK-3
包装: 带卷 (TR)
MBRD620CTG Series, NRVBD640CTG Series
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage, Per Leg
Figure 2. Typical Reverse Current,* Per Leg
Figure 3. Average Power Dissipation, Per Leg
1.2
1.0
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
10
VR, REVERSE VOLTAGE (VOLTS)
40 7050 60
0.0001
0
0.1
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
1.0
0
0
10
8.0
6.0
4.0
2.0
2.0
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
P
F(AV)
, AVERAGE POWER DISSIPATION (WATTS)
1.0
0.2 0.6 0.80.4
10 20 30
10
1000
3.0 4.0 5.0 6.0 7.0 108.0 9.0
0.1
1.4
9.0
7.0
5.0
3.0
1.0
, REVERSE CURRENT (mA)
R
1.0
0.01
TC
= 25
°C
150°C
125°C
75°C
TJ
= 150
°C
IPK/IAV
= 20
SINE
WAVE
SQUARE
WAVE
dc
10
5
TJ
= 175
°C
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR
is sufficient below rated V
R.
150°C
75°C
25°C
11
12
13
14
0.2
0.3
0.5
0.7
2.0
3.0
5.0
7.0
70
50
30
20
175°C
100
0.001
125°C
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