- 您现在的位置：买卖IC网 > Datasheet目录146 > SBR8A45SP5-13 (Diodes Inc)DIODE BYPASS 45V 8A POWERDI5 Datasheet资料下载
参数资料
| 型号： | SBR8A45SP5-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 113K |
| 描述： | DIODE BYPASS 45V 8A POWERDI5 |
| 产品培训模块： | Super Barrier Rectifier (SBR®) |
| 标准包装： | 1 |
| 系列： | SBR® |
| 二极管类型： | 超级势垒 |
| 电压 - (Vr)（最大）： | 45V |
| 电流 - 平均整流 (Io)： | 8A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 600mV @ 8A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 300µA @ 45V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerDI? 5 |
| 供应商设备封装： | PowerDI?5 |
| 包装： | 标准包装 |
| 产品目录页面： | 1593 (CN2011-ZH PDF) |
| 其它名称： | SBR8A45SP5-13DIDKR |
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBR8A45SP5
Document number: DS32081 Rev. 5 - 2
2 of 5
www.diodes.com
October 2012
? Diodes Incorporated
SBR8A45SP5
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
45 V
Average Rectified Output Current
IO
8 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
180 A
Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance Junction to Lead
RθJL
3 oC/W
Thermal Resistance Junction to Case (Note 5)
RθJC
8 oC/W
Thermal Resistance Junction to Ambient (Note 5)
RθJA
102 oC/W
Thermal Resistance Junction to Ambient (Note 6)
RθJA
60 oC/W
Operating Temperature Range
VR
≤
80% V
RRM
TJ
-65 to +150
oC
VR
≤
50% V
RRM
≤180
DC Forward Mode
≤200
Storage Temperature Range
TSTG
-65 to +175 oC
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
VF
-
-
-
0.52
0.60
0.57
V
IF
= 8A, T
J
= +25oC
IF
= 8A, T
J
= +125oC
Leakage Current (Note 7)
IR
-
-
0.03
10
0.30
75
mA
VR
= 45V, T
J
= +25oC
VR
= 45V, T
J
= +125oC
Notes: 5. FR-4 PCB, 2oz. Copper, minimum recommended pad layout per http://www.diodes.com
6. Polymide PCB, 2oz. Copper, minimum reco
mmended pad layout per http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
相关PDF资料 |
PDF描述 |
|---|---|
| SBR8A60P5-13 | DIODE SBR 60V 8A POWERDI5 |
| SBR8U20SP5-13 | DIODE SBR 20V 8A POWERDI5 |
| SBR8U60P5-13 | DIODE SBR 8A 60V POWERDI5 |
| SBRB1045G | DIODE SCHOTTKY 45V 10A D2PAK |
| SBRD8835LG | DIODE SCHOTTKY 35V 8A DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBR8A60P5-13 | 功能描述:MOSFET Super Barrier Rectif PDI5 T&R 5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SBR8F | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:FAST RECOVERY 1-PHASE SILICON BRIDGE RECTIFIERS |
| SBR8U20SP-5 | 制造商:Diodes Incorporated 功能描述: |
| SBR8U20SP5-13 | 功能描述:MOSFET Super Barrier Rectif PDI5 T&R 5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SBR8U60P5 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:8A SBR? SUPER BARRIER RECTIFIER PowerDI?5 |
发布紧急采购，3分钟左右您将得到回复。