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参数资料
| 型号： | SBT80-06J |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 整流器 |
| 英文描述： | 4 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | TO-220ML, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 51K |
| 代理商： | SBT80-06J |
SBT80-06J
No.8225-1/3
Applications
High frequency rectification (switching regulators, converters, choppers).
Features
Guaranteed up to Tj=150
°C.
Low forward voltage (VF max=0.58V).
Short reverse recovery time.
Low switching noise.
High reliability due to highly reliable planar structure.
Attachment workability is good by Mica-less package.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
60
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
66
V
Average Output Current
IO
50Hz resistive load, Sine wave, Tc=109
°C8
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
80
A
Junction Temperature
Tj
--55 to +150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Reverse Voltage
VR
IR=1mA, Tj=25°C*
60
V
Forward Voltage
VF
IF=3.0A, Tj=25°C*
0.58
V
Reverse Current
IR
VR=30V, Tj=25°C*
0.1
mA
Interterminal Capacitance
C
VR=10V, Tj=25°C*
130
pF
Thermal Resistance
Rth(j-c)
Junction-Case : Smoothed DC
5.0
°C / W
Note) * : Value per element
Ordering number : ENN8225
31505SD TS IM TB-00001167
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SBT80-06J
Schottky Barrier Diode (Twin Type Cathode Common)
60V, 8A Rectifier
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SBT80-06JS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:60V, 8A Rectifi er |
| SBT80-06LS | 功能描述:DIODE SCHOTTKY 60V 8A TO-220FI RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:- 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2 |
| SBT80-10GS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:100V, 8A Rectifi er |
| SBT80-10J | 功能描述:肖特基二极管与整流器 REC TO220 8A 100V SHOTTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBT80-10JS | 功能描述:肖特基二极管与整流器 REC TO220 8A 100V SHOTTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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