参数资料
型号: SCH1333-TL-H
厂商: ON Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET P-CH 20V 2A SCH6
标准包装: 5,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 130 毫欧 @ 1A,4.5V
闸电荷(Qg) @ Vgs: 3.3nC @ 4.5V
输入电容 (Ciss) @ Vds: 250pF @ 10V
功率 - 最大: 800mW
安装类型: *
封装/外壳: *
供应商设备封装: *
包装: *
Ordering number : ENA1531A
SCH1333
P-Channel Power MOSFET
–20V, –2A, 130m Ω , Single SCH6
Features
http://onsemi.com
?
?
?
1.8V drive
Halogen free compliance
Protection diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--20
±10
--2
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm)
--8
0.8
150
--55 to +150
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7028-002
Product & Package Information
? Package : SCH6
? JEITA, JEDEC : SOT-563
? Minimum Packing Quantity : 5,000 pcs./reel
1.6
6 5 4
0.2
SCH1333-TL-H
0.2
Packing Type : TL
Marking
YJ
1
2
3
TL
0.5
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SCH6
Electrical Connection
1, 2, 5, 6
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/O1409PE TKIM TC-00002148 No. A1531-1/7
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