参数资料
型号: SD1053C22S30LPBF
元件分类: 整流器
英文描述: 920 A, 2200 V, SILICON, RECTIFIER DIODE, DO-200AB
封装: BPUK-2
文件页数: 4/10页
文件大小: 233K
代理商: SD1053C22S30LPBF
SD1053C..L Series
3
Bulletin I2079 rev. B 04/00
www.irf.com
Ordering Information Table
1
-
Diode
2
-
Essential part number
3
-
3 = Fast recovery
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
6
-t
rr
code
7
-
L = Puk Case DO-200AB(B-PUK)
SD 105
3
C
30 S30
L
1
23
4
5
6
7
Device Code
Code
(
s)
(A)
(A/
s)
(V)
(
s)
(
C)
(A)
Test conditions
Max. values @ T
J
= 150 °C
Recovery Characteristics
Typical t
rr
I
pk
di/dt
V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
@ 25% I
RRM
S20
2.0
1000
100
- 50
4.0
400
180
S30
3.0
1000
100
- 50
4.5
550
230
T
J
= 25 oC
Conduction angle
Units
Conditions
Single Side Double Side
Sinusoidal conduction
Rectangular conduction
180°
0.009
0.008
0.006
T
J = TJ max.
120°
0.011
90°
0.014
0.015
K/W
60°
0.020
0.021
0.022
30°
0.036
R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs when devices operate at different conduction angles than DC)
SD1053C..L
S20
S30
T
J
Max. junction operating temperature range
-40 to 150
T
stg
Max. storage temperature range
-40 to 150
R
thJ-hs
Max. thermal resistance, case junction
0.073
DCoperation single side cooled
to heatsink
0.031
DCoperation double side cooled
F
Mounting force, ± 10%
14700
N
(1500)
(Kg)
wt
Approximate weight
255
g
Case style
DO-200AB(B-PUK)
See Outline Table
°C
Parameter
Units
Conditions
Thermal and Mechanical Specifications
K/W
相关PDF资料
PDF描述
SD1053C30S30L 920 A, 3000 V, SILICON, RECTIFIER DIODE, DO-200AB
SD1060YS 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-252
SD10150YS 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-252
SD106WS-GS18 0.2 A, SILICON, SIGNAL DIODE
SD107WS-TP 0.1 A, 30 V, SILICON, SIGNAL DIODE
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