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参数资料
| 型号： | SD1100C32C |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 1100 A, 3200 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, CERAMIC, B-43, PUK-2 |
| 文件页数： | 4/8页 |
| 文件大小： | 161K |
| 代理商： | SD1100C32C |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93535
4
Revision: 14-May-08
SD1100C..C Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version),
1400 A
Fig. 7 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
Fig. 9 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
Fig. 11 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
20
30
40
50
60
70
80
90
10 0
11 0
12 0
13 0
14 0
15 0
0
2 00
40 0
6 00
800 1 000 1200 1400
30°
60°
90°
120°
180°
Average Forw ard Cur ren t (A)
M
a
xi
mu
m
A
llo
w
a
bl
e
He
at
si
n
k
T
e
m
p
e
rat
u
re
(
°C
)
Co nd uct io n A ng le
SD 1100 C..C Series (25 00V to 320 0V)
(Double Side Cooled )
R
(D C) = 0.038 K/W
thJ -h s
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0
4 00
80 0
1200
1600
2000
2 40 0
30°
60°
90°
180°
DC
12 0°
Avera ge Forward Curren t (A)
M
a
x
imu
m
A
llo
w
a
b
le
H
e
a
ts
in
k
T
e
m
p
e
ra
tu
re
(
°C
)
Co nd uc tion Pe rio d
SD11 00C..C Series (2500 V to 3200 V)
(Double Side Cooled)
R
(D C) = 0.0 38 K/W
thJ -h s
0
50 0
10 0 0
15 0 0
20 0 0
25 0 0
30 0 0
35 0 0
04 00
8 0 0
1 2 00
1 60 0
180°
120°
90°
60°
30°
RMS Limit
M
a
x
im
u
m
A
v
e
rag
e
F
o
rw
ar
d
P
o
w
e
rL
o
ss
(W
)
Average For ward Curr en t (A)
Co nd uct io n A ng le
SD 1100 C..C Series
(400V to 2 000 V)
T = 18 0°C
J
0
500
10 0 0
15 0 0
20 0 0
25 0 0
30 0 0
35 0 0
40 0 0
45 0 0
0
5 00
1000
1500
2000
2500
3000
DC
180°
120°
90°
60°
30°
RM S Lim it
Co nd uc tio n Pe rio d
M
a
x
im
u
m
A
ve
rag
e
F
o
rw
ar
d
P
o
w
e
r
L
o
ss
(W
)
Average Forward Current (A)
SD110 0C..C Series
(400V to 2000V )
T = 1 80°C
J
0
50 0
1000
1500
2000
2500
3000
0
2 00
400
6 00
800 1 00 0 1 200 1400
180°
120°
90 °
60 °
30 °
RM S Limit
Co nd uc tio n Ang le
M
a
x
imu
m
A
ve
rag
e
F
o
rw
ar
d
P
o
w
e
r
L
o
ss
(
W
)
Average Forw ard Curr ent (A)
SD1 100C..C Series
(250 0V to 320 0V)
T = 15 0°C
J
0
50 0
1000
1500
2000
2500
3000
3500
0
4 0 0
8 0 0
1 20 016 0 02 00 024 0 0
DC
18 0°
12 0°
90°
60°
30°
RMS Lim it
Co nd uctio n Pe rio d
M
a
x
imu
m
A
v
e
ra
g
e
F
o
rw
a
rd
P
o
w
e
rL
o
ss
(
W
)
Aver age Forward Current (A)
SD110 0C..C Series
(25 00V to 32 00V )
T = 1 50°C
J
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| SD1100C08LPBF | 1170 A, 800 V, SILICON, RECTIFIER DIODE, DO-200AB |
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| SD1100C20L | 1170 A, 2000 V, SILICON, RECTIFIER DIODE, DO-200AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SD1100C32L | 功能描述:DIODE STD REC 3200V 910A B-PUK RoHS:是 类别:半导体模块 >> 二极管，整流器 系列:- 标准包装:10 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:1.45V @ 30A 电流 - 在 Vr 时反向漏电:15µA @ 400V 电流 - 平均整流 (Io)（每个二极管）:30A 电压 - (Vr)（最大）:400V 反向恢复时间(trr):65ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:2 个独立式 安装类型:底座安装 封装/外壳:ISOTOP 供应商设备封装:ISOTOP? 包装:管件 |
| SD1100CHP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS |
| SD1100DD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS |
| SD1100HD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS |
| SD1100P | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:1.0 Amp Schottky Barrier Rectifiers |
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