- 您现在的位置：买卖IC网 > PDF目录96814 > SDP8407-001 PHOTO TRANSISTOR DETECTOR PDF资料下载
参数资料
| 型号： | SDP8407-001 |
| 元件分类： | 光敏三极管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 327K |
| 代理商： | SDP8407-001 |
Silicon Phototransistor
SDP8407
DESCRIPTION
FEATURES
End-looking plastic package
135 (nominal) acceptance angle
Low profile for design flexibility
Mechanically and spectrally matched to
SEP8507 infrared emitting diode
The SDP8407 is an NPN silicon phototransistor molded
in an end-looking black plastic package. The chip is
positioned to accept radiation from the top of the
package. Lead lengths are staggered to provide a
simple method of polarity identification.
DIM_018.ds4
INFRA-16.TIF
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
±0.008(0.20)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
124
相关PDF资料 |
PDF描述 |
|---|---|
| SDP8475-201 | PHOTO TRANSISTOR DETECTOR |
| SDP8604-301 | LOGIC OUTPUT PHOTO DETECTOR |
| SDP8614-301 | LOGIC OUTPUT PHOTO DETECTOR |
| SE1103 | 4.8 mm, 1 ELEMENT, INFRARED LED, 890 nm |
| SE2470-002 | 1 ELEMENT, INFRARED LED, 880 nm |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SDP8425-001 | 功能描述:光电晶体管 Infrared Sensors RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| SDP8425-002 | 功能描述:光电晶体管 Infrared Sensors RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| SDP8436 | 制造商:HONEYWELL-ACC 制造商全称:Honeywell Accelerometers 功能描述:Infrared Sensors Line Guide |
| SDP8436-001 | 功能描述:光电晶体管 INFRARED SENSORS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| SDP8436-002 | 功能描述:光电晶体管 Silicon PhotoTrans Sd-looking Plstc Pkg RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
发布紧急采购，3分钟左右您将得到回复。