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参数资料
| 型号： | SDP8475-201 |
| 元件分类： | 光敏三极管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 410K |
| 代理商： | SDP8475-201 |
Low Light Rejection Phototransistor
SDP8475-201
DESCRIPTION
FEATURES
T-1 plastic package
Low light level immunity
20 (nominal) acceptance angle
Mechanically and spectrally matched to
SEP8505 and SEP8705 infrared emitting diodes
(.51)
.020 SQ.LEADTYP
.050
(1.27)
DIA.
(3.94)
.155
EMITTER
COLLECTOR
DIA.
.125 (3.18)
.115 (2.92)
MIN.
(12.7)
.500
.03 (.76)
.180(4.57)
.200(5.08)
MAX.
(6.35)
.250
.05(1.27)
DIM_100.ds4
INFRA-22.TIF
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
The SDP8475 is an NPN silicon phototransistor which
internal base- emitter shunt resistance. Transfer molding
of this device in a clear T- 1 plastic package assures
superior optical centerline performance compared to
other molding processes. Lead lengths are staggered to
provide a simple method of polarity identification.
Distinguising Feature:
This device incorporates all of the desired features of a
standard phototransistor with the advantage of low light
immunity. The phototransistor switching occurs when
the incident light increases above the threshold (knee
point). When the light level exceeds the knee point of
the device, it will function as a standard phototransistor.
Chart A illustrates the light current output of the low light
rejection phototransistor as compared to a standard
phototransistor with similar sensitivity.
Typical Application Uses:
Ideally suited for use in applications which require
ambient light rejection, or in transmissive applications
where the interrupter media is semi- transparent to
infrared energy. This device also provides high contrast
ratio in reflective applications where unwanted
background reflection is a possibility.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
136
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