参数资料
型号: SF10JG-T
厂商: Diodes Inc
文件页数: 1/3页
文件大小: 370K
描述: DIODE SUPERFAST 1A 600V DO-41
标准包装: 5,000
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 1.5V @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 50ns
电流 - 在 Vr 时反向漏电: 10µA @ 600V
电容@ Vr, F: 50pF @ 4V,1MHz
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-41
包装: 带卷 (TR)
MIL-STD-202, Method 208
e3
DS24012 Rev. 4 - 2
1
of 3
SF10AG - SF10JG
www.diodes.com
Diodes Incorporated
SF10AG - SF10JG
1.0A SUPER-FAST GLASS PASSIVATED
RECTIFI
ER
Features
A
A
B
C
D
DO-41
Dim
Min
Max
A
25.40
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum
Ratings and Elect
rical Characteristics
@ TA
= 25
C unless otherwise specified
?
Glass Passivated
Die Construction
?
Super-Fast Switching for High Efficiency
?
Surge Overload Rating to 30A Peak
?
Low Reverse Leakage Current
?
Lead Free Finish, RoHS
Compliant (Note
4)
Mechanical
Data
?
Case: DO-41
?
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020C
?
Terminals: Finish - Tin. Plated Leads Solderable
per
?
Polarity: Cathode Band
?
Marking: Type Number
?
Ordering Information: See Last Page
?
Weight: 0.3 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SF10
AG
SF10
BG
SF10
CG
SF10
DG
SF10
FG
SF10
GG
SF10
HG
SF10
JG
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 5)
V
VRRM
VRWMR
50
100
150
200
300
400
500
600
V
RMS Reverse Voltage
VR(RMS)
35
70
105
140
210
280
350
420
V
Average Rectified Output Current
(Note 1)
@ TA
= 75
C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
IFSM
30
A
Forward Voltage
@ IF
= 1.0A
VFM
0.95
1.3
1.5
V
Peak Reverse Current
@ TA
= 25
C
@ TA
= 100
C
at Rated DC Blocking Voltage (Note 5)
IRM
10
100
mA
Reverse Recovery Time (Note 3)
trr
35
40
50
ns
Typical Total Capacitance (Note 2)
CT
75
50
pF
Thermal Resistance Junction to Ambient
RqJA
75
°C/W
Operating and Storage Temperature Range
Tj,TSTG
-65 to +150
C
Notes: 1. Valid provided that leads are maintained at
ambient temperature at a distance of
9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured with I
F
= 0.5A, I
R
= 1.0A,
Irr
= 0.25A. (See Figure 5)
4.
RoHS
revision13.2.2003. Glass and high temperature solder exemptions applied, see
EU Directive Annex Notes 5 and 7.
5. Short durat
ion pulse test used to minimize self-heating effect
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