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| 型号： | SMMBD770T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 127K |
| 描述： | DIODE SCHOTTKY 200MA 70V SOT-323 |
| 标准包装： | 3,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 70V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 10mA |
| 速度： | * |
| 电流 - 在 Vr 时反向漏电： | 200nA @ 35V |
| 电容@ Vr, F： | 1pF @ 20V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 带卷 (TR) |
?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 6
1
Publication Order Number:
MMBD330T1/D
MMBD330T1G,
SMMBD330T1G,
MMBD770T1G,
SMMBD770T1G
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high?efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications. They are housed in the
SOT?323/SC?70 package which is designed for low?power surface
mount applications.
Features
?
Extremely Low Minority Carrier Lifetime
?
Very Low Capacitance
?
Low Reverse Leakage
?
Available in 8 mm Tape and Reel
?
AEC Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MMBD330T1G, SMMBD330T1G
MMBD770T1G, SMMBD770T1G
VR
30
70
Vdc
Forward Continuous Current (DC)
IF
200
mA
Nonrepetitive Peak Forward Current
(Note 1)
IFSM
1.0
A
Forward Power Dissipation
TA
= 25
?C
PF
120
mW
Junction Temperature
TJ
?55 to +125
?C
Storage Temperature Range
Tstg
?55 to +150
?C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 60 Hz Halfsine.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
*Date Code orientation may vary depending
upon the manufacturing location.
http://onsemi.com
Device Package Shipping?
ORDERING INFORMATION
MARKING DIAGRAMS
SC?70/SOT?323
CASE 419
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBD770T1G SC?70
(Pb?Free)
3,000/Tape & Reel
13
MMBD330T1G SC?70
(Pb?Free)
3,000/Tape & Reel
XX M
1
XX = Specific Device Code
4T = MMBD330T1
5H = MMBD770T1
M = Date Code
= Pb?Free Package
(Note: Microdot may be in either location)
SMMBD330T1G SC?70
(Pb?Free)
3,000/Tape & Reel
SMMBD770T1G SC?70
(Pb?Free)
3,000/Tape & Reel
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| SMMBD914LT1G | 功能描述:二极管 - 通用，功率，开关 SS SWCH DIO SPCL RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| SMMBD914LT3 | 制造商:ON Semiconductor 功能描述: |
| SMMBD914LT3G | 功能描述:二极管 - 通用，功率，开关 SS SWCH DIO SPCL RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| SMMBF4391LT1G | 功能描述:JFET SS JFET NCH 30V TR RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| SMMBF4393LT1G | 功能描述:TRANS JFET N-CH 30V SOT-23-3 RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
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