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| 型号： | SMMBD914LT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 127K |
| 描述： | DIODE SWITCHING HS 100V SOT-23 |
| 标准包装： | 10,000 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 100V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 10mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 4ns |
| 电流 - 在 Vr 时反向漏电： | 5µA @ 75V |
| 电容@ Vr, F： | 4pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 带卷 (TR) |
             ? Semiconductor Components Industries, LLC, 2011 November, 2011 ? Rev. 7 1 Publication Order Number: MMBD914LT1/D MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G High-Speed Switching Diode Features ? AEC?Q101 Qualified and PPAP Capable ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board (Note 1) TA = 25 ?C Derate above 25?C PD 225 1.8 mW mW/?C Thermal Resistance, Junction?to?Ambient RJA 556 ?C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25 ?C Derate above 25?C PD 300 2.4 mW mW/?C Thermal Resistance, Junction?to?Ambient RJA 417 ?C/W Junction and Storage Temperature Range TJ, Tstg ?55 to +150 ?C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping? ORDERING INFORMATION SOT?23 CASE 318 STYLE 8 MARKING DIAGRAM 1 ANODE 3 CATHODE MMBD914LT1G SOT?23 (Pb?Free) 3,000 / Tape & Reel ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com MMBD914LT3G SOT?23 (Pb?Free) 10,000 / Tape & Reel 1 5D M 5D = Device Code M = Date Code* = Pb?Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. SMMBD914LT1G SOT?23 (Pb?Free) 3,000 / Tape & Reel SMMBD914LT3G SOT?23 (Pb?Free) 10,000 / Tape & Reel |
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相关代理商/技术参数 |
参数描述 |
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| SMMBF4391LT1G | 功能描述:JFET SS JFET NCH 30V TR RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| SMMBF4393LT1G | 功能描述:TRANS JFET N-CH 30V SOT-23-3 RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
| SMMBFJ177LT1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| SMMBFJ310L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:JFET - VHF/UHF Amplifier Transistor |
| SMMBFJ310LT1 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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