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参数资料
| 型号： | SFC3.3-4.BCT |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, MO-211BB |
| 封装： | 1.50 X 1 MM, LEAD FREE, MO-211, FLIP CHIP-6 |
| 文件页数： | 3/7页 |
| 文件大小： | 230K |
| 代理商： | SFC3.3-4.BCT |
3
2008 Semtech Corp.
www.semtech.com
PRELIMINARY
PROTECTION PRODUCTS
SFC3.3-4
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
0
10
20
30
40
50
60
70
80
90
100
110
0
25
50
75
100
125
150
Ambient Temperature - TA (
oC)
%
of
Ra
te
d
P
o
w
er
or
IPP
Clamping Voltage vs. Peak Pulse Current
0
10
20
30
40
50
60
70
80
90
100
110
0
5
10
15
20
25
30
Time (s)
Pe
rcen
to
fI
PP
e
-t
td = IPP/2
Waveform
Parameters:
tr = 8s
td = 20s
Pulse Waveform
Forward Voltage vs. Forward Current
0.00
2.00
4.00
6.00
8.00
10.00
12.00
0
5
10
15
20
Peak Pulse Current - IPP (A)
C
la
m
pi
ng
V
o
lt
ag
e
-V
C
(V)
Waveform
Parameters:
tr = 8s
td = 20s
L to L
L to G
0.00
1.00
2.00
3.00
4.00
05
10
15
20
Peak Pulse Current - IPP (A)
C
la
m
ping
V
o
lt
a
g
e
-V
C
(V)
Waveform
Parameters:
tr = 8s
td = 20s
Normalized Junction Capacitance vs. Reverse Voltage
0.01
0.1
1
10
0.1
1
10
100
1000
Pulse Duration - tp (s)
Pe
ak
Pu
ls
ePo
wer
-
P
pk
(k
W
)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
0
123
4
Reverse Voltage - VR (V)
C
J(V
R
)/
C
J(V
R
=
0)
f = 1 MHz
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