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参数资料
| 型号： | SFC3.3-4.BCT |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, MO-211BB |
| 封装： | 1.50 X 1 MM, LEAD FREE, MO-211, FLIP CHIP-6 |
| 文件页数： | 5/7页 |
| 文件大小： | 230K |
| 代理商： | SFC3.3-4.BCT |
5
2008 Semtech Corp.
www.semtech.com
PRELIMINARY
PROTECTION PRODUCTS
SFC3.3-4
and should be avoided.
Stencil Design
A properly designed stencil is key to achieving ad-
equate solder volume without compromising assembly
yields. A 0.100mm thick, laser cut, electro-polished
stencil with 0.275mm square apertures and rounded
corners is recommended.
Reflow Profile
The flip chip TVS can be assembled using the reflow
requirements for IPC/JEDEC standard J-STD-020 for
assembly of small body components. During reflow,
the component will self-align itself on the pad.
EPD TVS Characteristics
The SFC3.3-4 is constructed using Semtech’s propri-
etary EPD technology. The structure of the EPD TVS is
vastly different from the traditional pn-junction devices.
At voltages below 5V, high leakage current and junction
capacitance render conventional avalanche technology
impractical for most applications. However, by utilizing
the EPD technology, the SFC3.3-4 can effectively
operate at 3.3V while maintaining excellent electrical
characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. Since the EPD
TVS devices use a 4-layer structure, they exhibit a
slightly different IV characteristic curve when compared
to conventional devices. During normal operation, the
device represents a high-impedance to the circuit up to
the device working voltage (V
RWM). During an ESD
event, the device will begin to conduct and will enter a
low impedance state when the punch through voltage
(V
PT) is exceeded. Unlike a conventional device, the low
voltage TVS will exhibit a slight negative resistance
characteristic as it conducts current. This characteris-
tic aids in lowering the clamping voltage of the device,
but must be considered in applications where DC
voltages are present.
When the TVS is conducting current, it will exhibit a
slight “snap-back” or negative resistance characteris-
tics due to its structures. This point is defined on the
curve by the snap-back voltage (V
SB) and snap-back
current (I
SB).
To return to a non-conducting state, the
Stencil Design
Assembly Guideline for Pb-Free Soldering
The following are recommendations for the assembly
of this device:
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current through the device must fall below the I
SB
(approximately <50mA) and the voltage must fall below
the V
SB (normally 2.8 volts for a 3.3V device). If a 3.3V
TVS is connected to 3.3V DC source, it will never fall
below the snap-back voltage of 2.8V and will therefore
stay in a conducting state.
The SFC3.3-4 is the first device to combine the advan-
tages of flip chip technology with those of the EPD
process technology.
相关PDF资料 |
PDF描述 |
|---|---|
| SFC3.3-4.TK | 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, MO-211BB |
| SFF2008G | 20 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SFPB-62 | 2 A, 20 V, SILICON, RECTIFIER DIODE |
| SFPB-72 | 3 A, 20 V, SILICON, RECTIFIER DIODE |
| SFS1002G | 5 A, 100 V, SILICON, RECTIFIER DIODE |
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