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参数资料
| 型号： | SFW9630 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | D2PAK-3 |
| 文件页数： | 1/9页 |
| 文件大小： | 306K |
| 代理商： | SFW9630 |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
A (Max.) @ V
DS = -200V
Low R
DS(ON) : 0.581 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
RθJC
RθJA
oC/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D2-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I2-PAK
*
* When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C=25
oC)
Continuous Drain Current (T
C=100
oC)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A=25
oC)
Total Power Dissipation (T
C=25
oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Characteristic
Value
Units
Symbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J , TSTG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
oC
A
oC
V
DSS
V
*
SFW/I9630
BV
DSS = -200 V
R
DS(on) = 0.8
I
D = -6.5 A
-200
-6.5
-4.0
-26
563
-6.5
7.0
-5.0
3.1
70
0.56
- 55 to +150
300
1.79
40
62.5
--
O
1
O
2
O
3
O
1
O
1
30
+
_
1999 Fairchild Semiconductor Corporation
Rev. B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SFW9630TM | 功能描述:MOSFET PCh/200V/6.5a/0.8Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SFW9634 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFW9640 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-CHANNEL POWER MOSFET |
| SFW9640TM | 功能描述:MOSFET P-CH/200V/11A/0.5OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SFW9640TM_SBEA021 | 制造商:Fairchild Semiconductor Corporation 功能描述:FSCSFW9640TM_SBEA021 P CHAN MOS POWER 20 |
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