参数资料
型号: SFW9630
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: Advanced Power MOSFET
中文描述: 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: D2PAK-3
文件页数: 4/9页
文件大小: 306K
代理商: SFW9630
P-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Case Temperature
Fig 9. Max. Safe Operating Area
P
DM
.
t
1.
t
2.
SFW/I9630
-75
-50
-25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
@ Notes :
1. V
GS
= -10 V
2. I
D
= -3.3 A
R
DS(on)
,
(Normalized)
Drain-Source
On-Resistance
T
J
, Junction Temperature [
oC]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10 ms
DC
1 ms
0.1 ms
@ Notes :
1. T
C
= 25
oC
2. T
J
= 150
oC
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
-I
D
,
Drain
Current
[A]
-V
DS
, Drain-Source Voltage [V]
-75
-50
-25
0
25
50
75
100
125
150
175
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= -250
A
-BV
DSS
,
(Normalized)
Drain-Source
Breakdown
Voltage
T
J
, Junction Temperature [
oC]
25
50
75
100
125
150
0
2
4
6
8
-I
D
,
Drain
Current
[A]
T
c , Case Temperature
[
oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. ZθJC (t)=1.79
o C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*ZθJC (t)
Z
θ
JC
(t)
,
Thermal
Response
t
1
, Square Wave Pulse Duration
[sec]
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