- 您现在的位置：买卖IC网 > PDF目录225175 > SFW9630 (FAIRCHILD SEMICONDUCTOR CORP) Advanced Power MOSFET PDF资料下载
参数资料
| 型号： | SFW9630 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | D2PAK-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 306K |
| 代理商： | SFW9630 |
P-CHANNEL
POWER MOSFET
Electrical Characteristics (T
C=25
oC unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “ Miller “ ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
BV/T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
oC
V
nA
A
pF
ns
nC
--
V
GS=0V,ID=-250A
I
D=-250A
See Fig 7
V
DS=-5V,ID=-250A
V
GS=-30V
V
GS=30V
V
DS=-200V
V
DS=-160V,TC=125
oC
V
GS=-10V,ID=-3.3A
V
DS=-40V,ID=-3.3A
V
DD=-100V,ID=-6.5A,
R
G=12
See Fig 13
V
DS=-160V,VGS=-10V,
I
D=-6.5A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS=0V,VDS=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
A
V
ns
C
Integral reverse pn-diode
in the MOSFET
T
J=25
oC,I
S=-6.5A,VGS=0V
T
J=25
oC,I
F=-6.5A
di
F/dt=100A/s
O
4
O
4
O
5
O
4
O
4
O
5
O
4
O
1
O
4
SFW/I9630
-200
--
-2.0
--
-0.17
--
125
49
14
22
41
17
29
5.8
13.6
--
-4.0
-100
100
-10
-100
0.8
--
965
185
75
35
55
90
45
36
--
4.2
740
--
160
0.96
-6.5
-26
-5.0
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=20mH, I
AS=-6.5A, VDD=-50V, RG=27*, Starting T J =25
oC
I
SD
-6.5A, di/dt 400A/
s, V
DD
BV
DSS , Starting T J =25
oC
Pulse Test : Pulse Width = 250
s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
1
O
2
O
3
O
4
O
5
<
_
<
_
<
_
<
_
相关PDF资料 |
PDF描述 |
|---|---|
| SFX-DM-15DM | INTERCONNECTION DEVICE |
| SFX-DMDM-1.5M | INTERCONNECTION DEVICE |
| SFX-NMNM-4 | INTERCONNECTION DEVICE |
| SFX-NMNM-6 | INTERCONNECTION DEVICE |
| SG-3030JC32.7680KB2 | CRYSTAL OSCILLATOR, CLOCK, 0.032768 MHz, CMOS OUTPUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SFW9630TM | 功能描述:MOSFET PCh/200V/6.5a/0.8Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SFW9634 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFW9640 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-CHANNEL POWER MOSFET |
| SFW9640TM | 功能描述:MOSFET P-CH/200V/11A/0.5OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SFW9640TM_SBEA021 | 制造商:Fairchild Semiconductor Corporation 功能描述:FSCSFW9640TM_SBEA021 P CHAN MOS POWER 20 |
发布紧急采购，3分钟左右您将得到回复。