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参数资料
| 型号： | SGH15N60RUFDTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | IGBT SHORT CIRC 600V 15A TO-3P |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Product Discontinuation 27/Feb/2012 |
| 标准包装： | 30 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.8V @ 15V，15A |
| 电流 - 集电极 (Ic)（最大）： | 24A |
| 功率 - 最大： | 160W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3P |
| 包装： | 管件 |
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx?
Bottomless?
CoolFET?
CROSSVOLT ?
DenseTrench?
DOME?
EcoSPARK?
E 2 CMOS?
EnSigna?
FACT?
FACT Quiet Series?
FAST ?
FASTr?
FRFET?
GlobalOptoisolator?
GTO?
HiSeC?
I 2 C?
ISOPLANAR?
LittleFET?
MicroFET?
MicroPak?
MICROWIRE?
OPTOLOGIC?
OPTOPLANAR?
PACMAN?
POP?
Power247?
PowerTrench ?
QFET?
QS?
QT Optoelectronics?
Quiet Series?
SLIENT SWITCHER ?
SMART START?
SPM?
STAR*POWER?
Stealth?
SuperSOT?-3
SuperSOT?-6
SuperSOT?-8
SyncFET?
TinyLogic?
TruTranslation?
UHC?
UltraFET ?
VCX?
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
?2002 Fairchild Semiconductor Corporation
Product Status
Formative or In
Design
First Production
Full Production
Not In Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5
相关PDF资料 |
PDF描述 |
|---|---|
| SGH20N60RUFDTU | IGBT SHORT CIRC 600V 20A TO-3P |
| SGH23N60UFDTU | IGBT HI PERFORM 600V 12A TO-3P |
| SGH30N60RUFDTU | IGBT SHORT CIRC 600V 30A TO-3P |
| SGH40N60UFDTU | IGBT HI PERFORM 600V 20A TO-3P |
| SGH40N60UFTU | IGBT HI PERFORM 600V 20A TO-3P |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SGH15N60RUFTU | 功能描述:IGBT 晶体管 600V/15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGH20N120RUF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGH20N120RUFD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGH20N120RUFDTU | 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGH20N120RUFTU | 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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