参数资料
型号: SGN08G64B3BB2SA-CCWRT
厂商: Swissbit NA Inc
文件页数: 11/15页
文件大小: 0K
描述: SDRAM DDR3 8GB 204 SO-DIMM
特色产品: 64-Bit DDR3 SDRAM Module
标准包装: 1
存储器类型: DDR3 SDRAM
存储容量: 8GB
速度: 1333MT/s
封装/外壳: 204-SODIMM
其它名称: 1052-1067
preliminary Data Sheet
Rev.0.9
15.11.2011
DDR3 SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED
AC OPERATING CONDITIONS (Continued)
(0°C ≤ T CASE ≤ + 85°C; V DDQ = +1.5V ± 0.075V, V DD = +1.5V ± 0.075V)
AC CHARACTERISTICS
12800-11-11-11
10600-9-9-9
PARAMETER
Exit reset from CKE HIGH to a
valid command
Begin power supply ramp to
power supplies stable
RESET# LOW to power supplies
stable
RESET# LOW to I/O and RTT
High-Z
Exit precharge power-down to
any non-READ command
CKE minimum high/low time
SYMBOL
t XPR
t V DDPR
t RPS
t IOz
t XP
t CKE
MIN
max
5nCK,
t RFC + 10ns
-
0
-
max
3nCK,6ns
max
3nCK,
MAX
-
200
200
20
-
-
MIN
max
5nCK,
t RFC + 10ns
-
0
-
max
3nCK,6ns
max
3nCK,
MAX
-
200
200
20
-
-
Unit
t CK
ms
ms
ns
t CK
t CK
5ns
5.625ns
Temperature Sensor with Serial Presence-Detect EEPROM
EVENT
SCL
WP/ EVENT
SDA
R1
0 Ω
SA0
SA0
SA1
SA1
SA2
Temperature Sensor with Serial Presence-Detect EEPROM Operating Conditions
Parameter / Condition
Supply voltage
Supply current: V DD = 3.3V
Input high voltage: Logic 1; SCL, SDA
Input low voltage: Logic 0; SCL, SDA
Output low voltage: I OUT = 2.1mA
Input current
Temperature sensing range
Temperature sensor accuracy
Symbol
V DDSPD
I DD
V IH
V IL
V OL
I IN
MIN
+3
+1.45
-
-
-5.0
TBD
TBD
MAX
+3.6
+2.0
V DDSPD +1
550
400
5.0
TBD
TBD
Unit
V
mA
V
mV
mV
μA
°C
°C
Swissbit AG
Industriestrasse 4
CH – 9552 Bronschhofen
Fon: +41 (0) 71 913 03 03
Fax: +41 (0) 71 913 03 15
www.swissbit.com
eMail: info@swissbit.com
Page 11
of 15
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