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参数资料
| 型号： | SGN08G64B3BB2SA-CCWRT |
| 厂商： | Swissbit NA Inc |
| 文件页数： | 8/15页 |
| 文件大小： | 0K |
| 描述： | SDRAM DDR3 8GB 204 SO-DIMM |
| 特色产品： | 64-Bit DDR3 SDRAM Module |
| 标准包装： | 1 |
| 存储器类型： | DDR3 SDRAM |
| 存储容量： | 8GB |
| 速度： | 1333MT/s |
| 封装/外壳： | 204-SODIMM |
| 其它名称： | 1052-1067 |
preliminary Data Sheet
Rev.0.9
15.11.2011
Parameter
& Test Condition
OPERATING WRITE CURRENT:
All device banks open, Continuous burst writes; One
Symbol
I DD4W
max.
12800-11-11-11
1000
10600-9-9-9
840
Unit
mA
module rank active; BL = 4, CL = CL (I DD ), AL = 0;
t CK = t CK (I DD ), t RAS = t RAS MAX (I DD ), t RP = t RP (I DD );
CKE is HIGH, CS# is HIGH between valid commands;
Address bus inputs are changing once every two clock
cycles; DQ inputs changing once per clock cycle
BURST REFRESH CURRENT:
t CK = t CK (I DD ); refresh command at every t RFC (I DD )
I DD5
2320
2320
mA
interval, CKE is HIGH, CS# is HIGH between valid
commands; All other Control and Address bus inputs
are changing once every two clock cycles; DQ inputs
changing once per clock cycle
SELF REFRESH CURRENT:
CK and CK# at 0V; CKE ≤ 0.2V ; All other Control and
I DD6
240
240
mA
Address bus inputs are floating at V REF ; DQ’s are
floating at V REF
OPERATING CURRENT*) :
Four device bank interleaving READs, I OUT = 0mA; BL = 4,
CL = CL (I DD ), AL = t RCD (I DD ) – 1 x t CK (I DD ); t CK = t CK
I DD7
1560
1480
mA
(I DD ), t RC = t RC (I DD ), t RRD = t RRD (I DD ), t RCD = t RCD (I DD );
CKE is HIGH, CS# is HIGH between valid commands;
Address bus inputs are not changing during
DESELECT; DQ inputs changing once per clock cycle
*) Value calculated as one module rank in this operating condition, and all other module ranks in IDD2P (CKE LOW)
mode.
TIMING VALUES USED FOR I DD MEASUREMENT
I DD MEASUREMENT CONDITIONS
SYMBOL
CL (I DD )
t RCD (I DD )
t RC (I DD )
t RRD (I DD )
t CK (I DD )
t RAS MIN (I DD )
t RAS MAX (I DD )
t RP (I DD )
t RFC (I DD )
12800-11-11-11
11
13.75
48.75
6
1.25
35
70’200
13.75
260
10600-9-9-9
9
13.5
49.5
6
1.5
36
70’200
13.5
260
Unit
t CK
ns
ns
ns
ns
ns
ns
ns
ns
Swissbit AG
Industriestrasse 4
CH – 9552 Bronschhofen
Fon: +41 (0) 71 913 03 03
Fax: +41 (0) 71 913 03 15
www.swissbit.com
eMail: info@swissbit.com
Page 8
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相关代理商/技术参数 |
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|---|---|
| SGN08G64B3BB2SA-DCRT | 制造商:SWISSBIT 功能描述:DDR3 SO-DIMM 8 GB 1600/CL11 - Trays 制造商:SWISSBIT NA INC 功能描述:DDR3 8GB SODIMM 制造商:Swissbit 功能描述:DIMM / SO-DIMM / SIMM DDR3, SO-DIMM, 8 GB, 1600/CL11, 0 C to + 70 C |
| SGN08G64B3BB2SA-DCWRT | 制造商:SWISSBIT NA INC 功能描述:DDR3 8GB SODIMM 制造商:Swissbit 功能描述:DIMM / SO-DIMM / SIMM 8GB DDR3 SDRAM 64 bit SO-DIMM CL11 |
| SGN08G72G1BB2SA-CCWRT | 功能描述:SDRAM DDR3 8GB 204 SO-UDIMM RoHS:是 类别:存储卡，模块 >> 存储器 - 模块 系列:- 标准包装:100 系列:- 存储器类型:SDRAM 存储容量:1GB 速度:133MHz 特点:- 封装/外壳:168-DIMM |
| SGN08G72G1BB2SA-DCRT | 制造商:SWISSBIT 功能描述:DDR3 SO-DIMM 8 GB 1600/CL11 - Trays 制造商:SWISSBIT NA INC 功能描述:DDR3 8GB SODIMM |
| SGN08G72G1BB2SA-DCWRT | 功能描述:MODULE DDR3 SDRAM 8GB 204SOUDIMM 制造商:swissbit na inc. 系列:- 零件状态:过期 存储器类型:DDR3 SDRAM 存储容量:8GB 速度:1600MT/s 封装/外壳:204-SO-UDIMM 标准包装:100 |
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