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参数资料
| 型号： | SGP23N60UFTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | IGBT W/DIODE 600V TO-220-3 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.6V @ 15V，12A |
| 电流 - 集电极 (Ic)（最大）： | 23A |
| 功率 - 最大： | 100W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
Absolute Maximum Ratings
T C = 25 ? C unless otherwise noted
Symbol
Description
Ratings
Unit
V CES
V GES
I C
I CM (1)
P D
T J
T stg
T L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T C = 25 ? C
@ T C = 100 ? C
@ T C = 25 ? C
@ T C = 100 ? C
600
? 20
23
12
92
100
40
-55 to +150
-55 to +150
300
V
V
A
A
A
W
W
? C
? C
? C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
1.2
62.5
Unit
? C / W
? C / W
Electrical Characteristics of the IGBT T
C
= 25 ? C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV CES
? B VCES /
? T J
I CES
I GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V GE = 0 V, I C = 250 uA
V GE = 0 V, I C = 1 mA
V CE = V CES , V GE = 0 V
V GE = V GES , V CE = 0 V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/ ? C
uA
nA
On Characteristics
V GE(th)
G-E Threshold Voltage
I C = 12 mA, V CE = V GE
3.5
4.5
6.5
V
V CE(sat)
Collector to Emitter
Saturation Voltage
I C = 12 A ,
I C = 23 A ,
V GE = 15 V
V GE = 15 V
--
--
2.1
2.6
2.6
--
V
V
Dynamic Characteristics
C ies
C oes
C res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V CE = 30 V , V GE = 0 V,
f = 1 MHz
--
--
--
720
100
25
--
--
--
pF
pF
pF
Switching Characteristics
t d(on)
t r
Turn-On Delay Time
Rise Time
--
--
17
27
--
--
ns
ns
t d(off)
t f
E on
E off
E ts
t d(on)
t r
t d(off)
t f
E on
E off
E ts
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn - On Switching Loss
Turn - Off Switching Loss
Total Switching Loss
V CC = 300 V, I C = 12 A,
R G = 23 ? , V GE = 15 V,
Inductive Load, T C = 25 ? C
V CC = 300 V, I C = 12 A,
R G = 23 ? , V GE = 15 V ,
Inductive Load, T C = 125 ? C
--
--
--
--
--
--
--
--
--
--
--
--
60
70
115
135
250
23
32
100
220
205
320
525
130
150
--
--
400
--
--
200
250
--
--
800
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
?1999 Fairchild Semiconductor Corporation
SGP23N60UF Rev. C1
2
www.fairchildsemi.com
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