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参数资料
| 型号： | SGP23N60UFTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | IGBT W/DIODE 600V TO-220-3 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.6V @ 15V，12A |
| 电流 - 集电极 (Ic)（最大）： | 23A |
| 功率 - 最大： | 100W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
1200
Common Emitter
200
Common Emitter
1000
Cies
V GE = 0V, f = 1MHz
T C = 25 ℃
100
V CC = 300V, V GE = ± 15V
I C = 12A
T C = 25 ℃
Ton
T C = 125 ℃
800
600
400
Coes
Tr
200
0
Cres
10
1
10
30
1
10
100
200
Collector - Emitter Voltage, V CE [V]
Fig 7. Capacitance Characteristics
Gate Resistance, R G [ ? ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
V CC = 300V, V GE = ± 15V
I C = 12A
1000
T C = 25 ℃
T C = 125 ℃
Toff
Eoff
Eon
Eon
Tf
100
50
Toff
Tf
100
30
Eoff
Common Emitter
V CC = 300V, V GE = ± 15V
I C = 12A
T C = 25 ℃
T C = 125 ℃
1
10
100
200
1
10
100
200
Gate Resistance, R G [ ? ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
200
Common Emitter
Gate Resistance, R G [ ? ]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
100
V CC = 300V, V GE = ± 15V
R G = 23 ?
T C = 25 ℃
T C = 125 ℃
V CC = 300V, V GE = ± 15V
R G = 23 ?
T C = 25 ℃
T C = 125 ℃
Toff
Tf
Ton
Toff
100
10
Tr
50
Tf
4
8
12
16
20
24
4
8
12
16
20
24
Collector Current, I C [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Collector Current, I C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
?1999 Fairchild Semiconductor Corporation
SGP23N60UF Rev. C1
4
www.fairchildsemi.com
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