参数资料
| 型号： | SI1040X-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IC LOAD SW N/P-CH MOSFET SC89-6 |
| 标准包装： | 1 |
| 类型： | 高端开关 |
| 输出数： | 1 |
| Rds（开）： | 500 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 430mA |
| 输入电压： | 1.8 V ~ 8 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SC-89-6 |
| 包装： | 标准包装 |
| 其它名称： | SI1040X-T1-GE3DKR |
Si1040X
Vishay Siliconix
COMPONENTS
R1 Pull-Up Resistor
R2 Optional Slew-Rate Control
Typical 10 k ? to 1 m ? a
Typical 0 to 100 k ? a
The Si1040X is ideally suited for high-side load switching in
portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
C1
Optional Slew-Rate Control
Typical 1000 pF
different load types.
Notes:
a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-
on.
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Input Voltage
ON/OFF Voltage
Symbol
V IN
V ON/OFF
Limit
8
8
Unit
V
Load Current
Continuous Intrinsic Diode Conduction a
Continuous a, b
Pulsed b, c
I L
I S
± 0.43
± 1.0
- 0.15
A
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ? )
P D
T J , T stg
ESD
0.174
- 55 to 150
2
W
°C
kV
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Continuous Current) a
Maximum Junction-to-Foot (Q2)
Symbol
R thJA
R thJC
Typical
600
450
Maximum
720
540
Unit
°C/ W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Reverse Leakage Current
I FL
V IN = 8 V, V ON/OFF = 0 V
1
μ A
Diode Forward Voltage
V SD
I S = - 0.15 A
0.85
1.2
V
ON Characteristics
Input Voltage Range
V IN
V ON/OFF = 1.5 V, V IN = 4.5 V, I D = 0.43 A
1.8
0.500
8
0.625
V
On-Resistance (P-Channel) at 1 A
R DS(on)
V ON/OFF = 1.5 V, V IN = 2.5 V, I D = 0.36 A
0.710
0.890
?
V ON/OFF = 1.5 V, V IN = 1.8 V, I D = 0.3 A
1.0
1.25
On-State (P-Channel) Drain Current
I D(on)
V IN-OUT ?? 0.2 V, V IN = 5 V, V ON/OFF = 1.5 V
V IN-OUT ?? 0.3 V, V IN = 3 V, V ON/OFF = 1.5 V
1
0.8
A
Notes:
a. Surface mounted on FR4 board.
b. V IN = 8 V, V ON/OFF = 8 V, T A = 25 °C.
c. Pulse test; pulse width ? 300 μ s, duty cycle ? 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71809
S10-2544-Rev. D, 08-Nov-10
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