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参数资料
| 型号： | SI1070X-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.2A SOT563F |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 99 毫欧 @ 1.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.55V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.3nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 385pF @ 15V |
| 功率 - 最大： | 236mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SC-89-6 |
| 包装： | 标准包装 |
| 其它名称： | SI1070X-T1-GE3DKR |
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Revision: 02-Oct-12
1
Document Number: 91000
相关PDF资料 |
PDF描述 |
|---|---|
| SI1071X-T1-GE3 | MOSFET P-CH 30V 960MA SC89-6 |
| SI1072X-T1-GE3 | MOSFET N-CH 30V SC89 |
| SI1120-A-GM | IC PROXIMITY/AMBIENT SEN 8ODFN |
| SI1141-A10-GM | IC SENSOR IR PROX/AMBIENT 10-QFN |
| SI1143-A10-GMR | SENS IR PROXIMITY AMB LT 10QFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI1071X | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI1071X_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30 V (D-S) MOSFET |
| SI1071X-T1-E3 | 功能描述:MOSFET 30V 0.96A 0.236W 167 mohms @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI1071X-T1-GE3 | 功能描述:MOSFET 30V 0.96A 0.236W 167 mohms @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI-10726 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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