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| 型号： | SI1302DL-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V SC-70-3 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 600mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 480 毫欧 @ 600mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.4nC @ 10V |
| 功率 - 最大： | 280mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3 |
| 包装： | 标准包装 |
| 其它名称： | SI1302DL-T1-GE3DKR |
Si1302DL
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS, I D = 250 μA
1
3
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 70 °C
V DS = 5 V, V GS = 10 V
1.5
± 100
1
5
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 0.6 A
V GS = 4.5 V, I D = 0.2 A
V GS = 15 V, I D = 0.6 A
0.410
0.600
0.75
0.480
0.700
?
S
Diode Forward
Voltage a
V SD
I S = 0.23 A, V GS = 0 V
0.8
1.2
V
Dynamic b
Total Gate Charge
Q g
0.86
1.4
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Q gs
Q gd
t d(on)
V DS = 15 V, V GS = 10 V, I D = 0.6 A
0.24
0.08
5
10
nC
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery Time
t r
t d(off)
t f
t rr
V DD = 15 V, R L = 30 ?
I D ? 0.5 A, V GEN = 10 V, R g = 6 ?
I F = 0.23 A, dI/dt = 100 A/μs
8
8
7
15
15
15
15
30
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.0
1.0
0. 8
V GS = 10 V thr u 4 V
0. 8
0.6
0.4
0.2
3 V
0.6
0.4
0.2
T C = 125 °C
25 °C
- 55 °C
0.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
www.vishay.com
2
V DS - Drain-to-So u rce V oltage ( V )
Output Characteristics
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics
Document Number: 71249
S10-2140-Rev. F, 20-Sep-10
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