- 您现在的位置：买卖IC网 > PDF目录17025 > SI1869DH-T1-E3 (Vishay Siliconix)IC LOAD SW LVL SHIFT 20V SC70-6 PDF资料下载
参数资料
| 型号： | SI1869DH-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | IC LOAD SW LVL SHIFT 20V SC70-6 |
| 标准包装： | 1 |
| 类型： | 高端开关 |
| 输出数： | 1 |
| Rds（开）： | 165 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 1.2A |
| 输入电压： | 1.8 V ~ 20 V |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1666 (CN2011-ZH PDF) |
| 其它名称： | SI1869DH-T1-E3DKR |
Si1869DH
Vishay Siliconix
Load Switch with Level-Shift
PRODUCT SUMMARY
FEATURES
V DS2 (V)
1.8 to 20
R DS(on) ( Ω )
0.165 at V IN = 4.5 V
0.222 at V IN = 2.5 V
0.303 at V IN = 1.8 V
I D (A)
± 1.2
± 1.0
± 0.7
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFETs: 1.8 V Rated
? ESD Protected: 2000 V On Input Switch,
V ON/OFF
? 165 m Ω Low R DS(on)
DESCRIPTION
The Si1869DH includes a p- and n-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1869DH operates on
supply lines from 1.8 V to 20 V, and can drive loads up to
1.2 A.
APPLICATION CIRCUITS
Si1869DH
? 1.8 to 20 V Input
? 1.5 to 8 V Logic Level Control
? Low Profile, Small Footprint SC70-6 Package
? Adjustable Slew-Rate
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Level Shift for Portable Devices
40
35
t f
V IN
R1
4
Q2
2, 3
C1
V OUT
30
25
I L = 1 A
V O N /OFF = 3 V
C i = 10 μF
C o = 1 μF
6
6
20
5
15
t d(off)
ON/OFF
C o
LOAD
10
Q1
C i
5
0
t r
t d(on)
1
0
2
4
6
8
10
R2
R2 (k Ω )
R2
COMPONENTS
R1 Pull-Up Resistor
R2 Optional Slew-Rate Control
GND
Typical 10 k Ω to 1 M Ω *
Typical 0 to 100 k Ω *
N ote: For R2 s w itching v ariations w ith other V I N /R1
com b inations see Typical Characteristics
Switching Variation
R2 at V IN = 2.5 V, R1 = 20 k Ω
The Si1869DH is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
C1
Optional Slew-Rate Control
Typical 1000 pF
different load types.
* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 73449
S10-0792-Rev. C, 05-Apr-10
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| ECM25DRPN | CONN EDGECARD 50POS DIP .156 SLD |
| 0210490241 | CABLE JUMPER 1.25MM .127M 18POS |
| ECM25DRPH | CONN EDGECARD 50POS DIP .156 SLD |
| ECM11DRKF | CONN EDGECARD 22POS DIP .156 SLD |
| 0982660144 | CBL 14POS 0.5MM JMPR TYPE D 3" |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI1869DH-T1-GE3 | 功能描述:MOSFET LOAD SWITCH 1.8V RA W/ LEVEL SHIFT RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI1900DL | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET |
| SI1900DL-T1 | 功能描述:MOSFET 30V 0.63A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI1900DL-T1-E3 | 功能描述:MOSFET 30V 0.63A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI1901DL | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
发布紧急采购，3分钟左右您将得到回复。