- 您现在的位置：买卖IC网 > PDF目录17025 > SI1869DH-T1-E3 (Vishay Siliconix)IC LOAD SW LVL SHIFT 20V SC70-6 PDF资料下载
参数资料
| 型号： | SI1869DH-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | IC LOAD SW LVL SHIFT 20V SC70-6 |
| 标准包装： | 1 |
| 类型： | 高端开关 |
| 输出数： | 1 |
| Rds（开）： | 165 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 1.2A |
| 输入电压： | 1.8 V ~ 20 V |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1666 (CN2011-ZH PDF) |
| 其它名称： | SI1869DH-T1-E3DKR |
Si1869DH
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
R2
SC70-6
Top V ie w
1
6
R1, C1
S2
4
Si1869DH
Q2
2, 3
D2
6
D2
2
5
O N /OFF
Markin g Code
R1,
C1
V C
XX
D2
3
4
S2
Lot Tracea b ility
and Date Code
ON/OFF
5
Q1
Part # Code
Orderin g Information: Si1 8 69DH-T1-E3 (Lead (P b )-free)
Si1 8 69DH-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
R2
1
Parameter
Drain-Source Voltage (D2-S2)
Input Voltage
ON/OFF Voltage
Symbol
V DS
V IN
V ON/OFF
Limit
- 20
20
8
Unit
V
Load Current
Continuous Intrinsic Diode Conduction a
Continuous a, b
Pulsed b, c
I L
I S
± 1.2
±3
- 0.4
A
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω )
P D
T J , T stg
ESD
1.0
- 55 to 150
2
W
°C
kV
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Continuous Current) a
Maximum Junction-to-Foot (Q2)
Symbol
R thJA
R thJF
Typical
100
44
Maximum
125
55
Unit
°C/W
SPECIFICATIONS T J = 25 °C unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Reverse Leakage Current
I FL
V IN = 8 V, V ON/OFF = 0 V
1
μ A
Diode Forward Voltage
V SD
I S = - 0.4 A
0.4
0.6
1.1
V
ON Characteristics
Input Voltage Range
Drain to Source Breakdown Voltage
V IN
V DS
V GS = 0 V, I D = - 250 μ A
1.8
- 20
20
V
V ON/OFF = 1.5 V, V IN = 4.5 V, I D = 1.2 A
0.132
0.165
On-Resistance (P-Channel) at 1 A
R DS(on)
V ON/OFF = 1.5 V, V IN = 2.5 V, I D = 1.0 A
0.177
0.222
Ω
V ON/OFF = 1.5 V, V IN = 1.8 V, I D = 0.7 A
0.242
0.303
On-State (P-Channel) Drain-Current
I D(on)
V IN-OUT ≤ 0.2 V, V IN = 5 V, V ON/OFF = 1.5 V
V IN-OUT ≤ 0.3 V, V IN = 3 V, V ON/OFF = 1.5 V
1
1
A
Notes:
a. Surface mounted on FR4 board.
b. V IN = 20 V, V ON/OFF = 8 V, T A = 25 °C.
c. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73449
S10-0792-Rev. C, 05-Apr-10
相关PDF资料 |
PDF描述 |
|---|---|
| ECM25DRPN | CONN EDGECARD 50POS DIP .156 SLD |
| 0210490241 | CABLE JUMPER 1.25MM .127M 18POS |
| ECM25DRPH | CONN EDGECARD 50POS DIP .156 SLD |
| ECM11DRKF | CONN EDGECARD 22POS DIP .156 SLD |
| 0982660144 | CBL 14POS 0.5MM JMPR TYPE D 3" |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI1869DH-T1-GE3 | 功能描述:MOSFET LOAD SWITCH 1.8V RA W/ LEVEL SHIFT RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI1900DL | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET |
| SI1900DL-T1 | 功能描述:MOSFET 30V 0.63A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI1900DL-T1-E3 | 功能描述:MOSFET 30V 0.63A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI1901DL | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
发布紧急采购，3分钟左右您将得到回复。