- 您现在的位置：买卖IC网 > PDF目录18287 > SI1967DH-T1-GE3 (Vishay Siliconix)MOSFET 2P-CH 20V 1.3A SC70-6 PDF资料下载
参数资料
| 型号： | SI1967DH-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2P-CH 20V 1.3A SC70-6 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 490 毫欧 @ 910mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4nC @ 8V |
| 输入电容 (Ciss) @ Vds： | 110pF @ 10V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 其它名称： | SI1967DH-T1-GE3DKR |
Si1967DH
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = - 250 μA
I D = - 250 μA
- 20
- 20
2
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
- 0.4
- 1.0
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = - 20 V, V GS = 0 V
V DS = - 20 V, V GS = 0 V, T J = 85 °C
V DS ≤ - 5 V, V GS = - 4.5 V
V GS = - 4.5 V, I D = - 0.91 A
-3
0.390
± 100
-1
- 10
0.490
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 0.8 A
0.500
0.640
Ω
V GS = - 1.8 V, I D = - 0.25 A
0.640
0.790
Forward Transconductance a
g fs
V DS = - 10 V, I D = - 0.91 A
2
S
Dynamic b
Input Capacitance
C iss
110
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = - 10 V, V GS = 0 V, f = 1 MHz
26
16
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = - 10 V, V GS = - 8 V, I D = - 1.1 A
V DS = - 10 V, V GS = - 4.5 V, I D = - 1.1 A
2.6
1.6
0.36
4.0
2.4
nC
Gate-Drain Charge
Q gd
0.33
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
R g
t d(on)
t r
t d(off)
f = 1 MHz
V DD = - 10 V, R L = 12 Ω
I D ? - 0.83 A, V GEN = - 4.5 V, R g = 1 Ω
7.5
12
27
15
20
40
25
Ω
Fall Time
Turn-On Delay Time
t f
t d(on)
10
2
15
5
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = - 10 V, R L = 12 Ω
I D ? - 0.83 A, V GEN = - 8 V, R g = 1 Ω
12
12
10
20
20
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
- 1.0
- 3.0
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = - 0.9 A
I F = - 0.83 A, dI/dt = 100 A/μs, T J = 25 °C
- 0.8
25
15
12
13
- 1.2
50
30
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68784
S10-0721-Rev. B, 29-Mar-10
相关PDF资料 |
PDF描述 |
|---|---|
| FXO-PC735R-66.6667 | OSC 66.6667 MHZ 3.3V PECL SMD |
| 445W31H30M00000 | CRYSTAL 30.000000 MHZ 32PF SMD |
| FXO-PC735R-66.667 | OSC 66.667 MHZ 3.3V PECL SMD |
| M2028TJW02-GA-1A | SWITCH ROCKER DPDT 6A 125V |
| FXO-PC735R-70 | OSC 70 MHZ 3.3V PECL SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI1970DH | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET |
| SI1970DH_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET |
| SI1970DH-T1-E3 | 功能描述:MOSFET DUAL N-CH 30V(D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI1970DH-T1-GE3 | 功能描述:MOSFET N-CH DUAL 30V SC70-6 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:TrenchFET® 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| SI1972DH | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
发布紧急采购，3分钟左右您将得到回复。