参数资料
型号: SI3460-E03-GMR
厂商: Silicon Laboratories Inc
文件页数: 6/24页
文件大小: 0K
描述: IC POWER MANAGEMENT CTLR 11VQFN
标准包装: 500
应用: 供电设备(PSE)
电流 - 电源: 500mA
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-VFDFN 裸露焊盘
供应商设备封装: 11-QFN(3x3)
包装: 带卷 (TR)
Si3460
2. Si3460 Electrical Specifications
The following specifications apply to the Si3460 controller. Refer to Tables 1, 5, 6, and 7, the Si3460-EVB User ’s
Guide, and schematics for additional details about the electrical specifications of the Si3460-EVB reference design.
Table 2. Recommended Operating Conditions*
Description
Operating temperature range
Thermal impedance
VDD input supply voltage
Symbol
T A
? JA
VDD
Test Conditions
No airflow
During all operating modes
(detect, classification, disconnect)
Min
–40
2.7
Typ
25
75
3.3
Max
+85
3.6
Unit
°C
°C/W
V
*Note: VDD = 2.7 to 3.6 V, –40 to +85 °C unless otherwise specified.
Table 3. Absolute Maximum Ratings*
Parameter
Ambient temperature under bias
Storage Temperature
Voltage on RST or any I/O pin with respect to GND
Voltage on VDD with respect to GND
Maximum total current through VDD
and GND
Conditions
VDD > 2.2 V
Max Rating
–55 to +125
–65 to +150
–0.3 to 5.8
–0.3 to 4.2
500
Unit
°C
°C
V
V
mA
Maximum output current into GATE, CTRL1,
CTRL2, 250KHZ, STATUS, ISENSE, RST,
VSENSE, DETA (any I/O pin)
100
mA
ESD tolerance
Lead Temperature
Human Body Model
Soldering, 10 seconds maximum
–2 kV to +2 kV
260
V
°C
*Note: Stresses above those listed in this table may cause permanent device damage. This is a stress rating only, and
functional operation of the devices at these or any conditions above those indicated in the operational listings of this
specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
6
Rev. 1.2
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