参数资料
型号: SI3460-E03-GMR
厂商: Silicon Laboratories Inc
文件页数: 8/24页
文件大小: 0K
描述: IC POWER MANAGEMENT CTLR 11VQFN
标准包装: 500
应用: 供电设备(PSE)
电流 - 电源: 500mA
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-VFDFN 裸露焊盘
供应商设备封装: 11-QFN(3x3)
包装: 带卷 (TR)
Si3460
3. Si3460-EVB Performance Characteristics
When implemented in accordance with the recommended external components and layout guidelines, the Si3460
controller enables the following typical performance characteristics in single-port PSE applications. Refer to the
Si3460-EVB applications note, schematics, and user's guide for more details.
Table 5. PSE Performance Characteristics 1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Protection and Current Control
Overload current limit
Overload current thresh-
old 3
I LIM
I CUT
Output = 100 ? across V OUT
Class 0/3/4
Class 1
400
15,400/
V OUT
5000/
425
340
88
450
400
98
mA
mA
mA
V OUT
Class 2
7000/
154
180
mA
V OUT
Overload current limit
Overload time
Output power at overload
Disconnect current
I LIM
T LIM
P LIM
I MIN
All class levels;
Output = 100 ? across V OUT
Output = 100 ? across V OUT
Disconnect current
400
50
15.4
5
425
60
17
7.5
450
75
10
mA
ms
W
mA
Detection Specifications 2
Detection point 1 (w/ 10 k ? source)
4.5
Detection voltage
Minimum signature
resistance
Maximum signature
resistance
V DET
R DETmin
R DETmax
Detection point 2 (w/ 10 k ? source)
Detection point 3 (w/ 10 k ? source)
15
26.5
7.5
4.5
17
29
19
33
V
k ?
k ?
Classification Specifications 2
Classification voltage
Classification current limit
Classification current
region
V CLASS
I CLASS
I CLASS_REGION
0 mA < ICLASS < 45 mA
Measured with 200 ? across V OUT
Class 0
Class 1
Class 2
Class 3
Class 4
–20.5
55
0
8
16
25
35
–15.5
95
5
13
21
31
45
V
mA
mA
mA
mA
mA
mA
Notes:
1. Typical specifications are based on an ambient operating temperature of 25 oC and V IN = +12 V unless otherwise
specified.
2. See “3. Si3460-EVB Performance Characteristics” for more details.
3. Absolute classification current limits are configurable.See section "4.3.2. Classification" on page 12.
8
Rev. 1.2
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