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| 型号： | SI3812DV-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 2A 6-TSOP |
| 标准包装： | 3,000 |
| 系列： | LITTLE FOOT® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 125 毫欧 @ 2.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 600mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4nC @ 4.5V |
| 功率 - 最大： | 830mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSOP（0.065"，1.65mm 宽） |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
Si3812DV
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
Junction-to-Ambient a
Junction to Foot (MOSFET Drain, Schottky Cathode)
t ? 5s
Steady State
Steady State
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
R thJA
R thJF
93
103
130
140
75
80
110
125
150
165
90
95
°C/W
Note:
a. Surface mounted on 1" x 1" FR4 board.
MOSFET AND SCHOTTKY SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
(MOSFET and Schottky)
On-State Drain Current a
V GS(th)
I GSS
I DSS
I D(on)
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 12 V
V DS = 16 V, V GS = 0 V
V DS = 16 V, V GS = 0 V, T J = 85 °C
V DS ?? 5 V, V GS = 4.5 V
0.6
5
± 100
1
10
V
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
Schottky Diode Forward Voltage a
R DS(on)
g fs
V SD
V GS = 4.5 V, I D = 2.4 A
V GS = 2.5 V, I D = 1.0 A
V DS = 5 V, I D = 2.4 A
I S = 1.5 A, V GS = 0 V
0.100
0.160
5
0.79
0.125
0.200
1.1
?
S
V
Dynamic b
Total Gate Charge
Q g
2.1
4.0
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Q gs
Q gd
R g
t d(on)
V DS = 10 V, V GS = 4.5 V, I D = 2.4 A
1
0.3
0.4
10
3.7
17
nC
?
Rise Time
t r
V DD = 10 V, R L = 10 ?
30
50
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
t d(off)
t f
t rr
I D ? 1 A, V GEN = 4.5 V, R g = 6 ?
I F = 3.0 A, dI/dt = 100 A/μs
14
6
30
25
12
50
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Forward Voltage Drop
Symbol
V F
Test Conditions
I F = 0.5 A
I F = 0.5 A, T J = 125 °C
Min.
Typ.
0.42
0.33
Max.
0.48
0.4
Unit
V
V R = 20
0.002
0.100
Maximum Reverse Leakage Current
I rm
V R = 20 V, T J = 75 °C
0.06
1
mA
V R = 20 V, T J = 125 °C
1.5
10
Junction Capacitance
C T
V R = 10 V
31
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
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| SI3831DV | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Bi-Directional P-Channel MOSFET/Power Switch |
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