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参数资料
| 型号： | SI4403BDY |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | P通道的1.8 V（GS）的MOSFET的 |
| 文件页数： | 2/4页 |
| 文件大小： | 39K |
| 代理商： | SI4403BDY |
Si4403DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71683
S-04393
—
Rev. A, 13-Aug-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
250 A
–
0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
V
DS
=
–
16 V, V
GS
= 0 V
–
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
16 V, V
GS
= 0 V, T
J
= 70 C
–
10
A
On-State Drain Current
a
I
D(on)
V
DS
–
5 V, V
GS
=
–
4.5 V
20
A
V
GS
=
–
4.5 V, I
D
=
–
7.4 A
0.014
0.017
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
–
2.5 V, I
D
=
–
6.3
A
0.018
0.023
V
GS
=
–
1.8 V, I
D
=
–
5.5
A
0.024
0.032
Forward Transconductance
a
g
fs
V
DS
=
–
15 V, I
D
=
–
7.4 A
28
S
Diode Forward Voltage
a
V
SD
I
S
=
–
1.3 A, V
GS
= 0 V
–
0.64
–
1.1
V
Dynamic
b
Total Gate Charge
Q
g
30.5
50
Gate-Source Charge
Q
gs
V
DS
=
–
10 V,
V
GS
=
–
5 V, I
D
=
–
7.4 A
5.3
nC
Gate-Drain Charge
Q
gd
3.8
Turn-On Delay Time
t
d(on)
30
50
Rise Time
t
r
V
=
–
10 V, R
= 15
–
1 A, V
GEN
=
–
4.5 V, R
G
= 6
30
50
Turn-Off Delay Time
t
d(off)
I
D
110
200
ns
Fall Time
t
f
65
110
Source-Drain Reverse Recovery Time
t
rr
I
F
=
–
1.3 A, di/dt = 100 A/ s
45
80
Notes
a
b
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
0
6
12
18
24
30
0
2
4
6
8
V
GS
= 5 thru 2 V
T
C
= 125 C
–
55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
–
Drain-to-Source Voltage (V)
–
I
D
V
GS
–
Gate-to-Source Voltage (V)
–
I
D
1.5 V
0
–
1 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4403BDY-T1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET |
| SI4403BDY-T1-E3 | 功能描述:MOSFET 20V 9A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4403BDY-T1-GE3 | 功能描述:MOSFET 20V 9.9A 2.5W 17mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4403CDY | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 1.8 V (G-S) MOSFET |
| SI4403CDY-T1-GE3 | 制造商:Vishay Siliconix 功能描述:MOSFET P CH W/D 20V 13.4A SO8 制造商:Vishay Siliconix 功能描述:MOSFET, P CH, W/D, 20V, 13.4A, SO8 制造商:Vishay Siliconix 功能描述:MOSFET, P CH, W/D, 20V, 13.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:5W ;RoHS Compliant: Yes |
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