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参数资料
| 型号： | SI5402DC-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 6/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V 1206-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 4.9A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 1206-8 ChipFET? |
| 包装： | 带卷 (TR) |
AN811
Vishay Siliconix
Single-Channel 1206-8 ChipFET r Power MOSFET Recommended
Pad Pattern and Thermal Performance
INTRODUCTION
New Vishay Siliconix ChipFETs in the leadless 1206-8
package feature the same outline as popular 1206-8 resistors
and capacitors but provide all the performance of true power
semiconductor devices. The 1206-8 ChipFET has the same
footprint as the body of the LITTLE FOOT R TSOP-6, and can
be thought of as a leadless TSOP-6 for purposes of visualizing
board area, but its thermal performance bears comparison
with the much larger SO-8.
80 mil
68 mil
This technical note discusses the single-channel ChipFET
1206-8 pin-out, package outline, pad patterns, evaluation
board layout, and thermal performance.
28 mil
PIN-OUT
Figure 1 shows the pin-out description and Pin 1 identification
for the single-channel 1206-8 ChipFET device. The pin-out is
similar to the TSOP-6 configuration, with two additional drain
pins to enhance power dissipation and thermal performance.
The legs of the device are very short, again helping to reduce
the thermal path to the external heatsink/pcb and allowing a
larger die to be fitted in the device if necessary.
Single 1206-8 ChipFE T
1
D
D D
26 mil
FIGURE 2. Footprint With Copper Spreading
The pad pattern with copper spreading shown in Figure 2
improves the thermal area of the drain connections (pins
1,2,3,6.7,8) while remaining within the confines of the basic
footprint. The drain copper area is 0.0054 sq. in. or
3.51 sq. mm). This will assist the power dissipation path away
from the device (through the copper leadframe) and into the
board and exterior chassis (if applicable) for the single device.
The addition of a further copper area and/or the addition of vias
to other board layers will enhance the performance still further.
An example of this method is implemented on the
Vishay Siliconix Evaluation Board described in the next
section (Figure 3).
D
D
D
S
G
THE VISHAY SILICONIX EVALUATION
BOARD FOR THE SINGLE 1206-8
Bottom View
FIGURE 1.
For package dimensions see the 1206-8 ChipFET package
outline drawing ( http://www.vishay.com/doc?71151 ).
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in Application
Note 826, Recommended Minimum Pad Patterns With Outline
Drawing Access for Vishay Siliconix MOSFET s,
( http://www.vishay.com/doc?72286 ). This is sufficient for low
power dissipation MOSFET applications, but power
semiconductor performance requires a greater copper pad
area, particularly for the drain leads.
Document Number: 71126
12-Dec-03
The ChipFET 1206-08 evaluation board measures 0.6 in by
0.5 in. Its copper pad pattern consists of an increased pad area
around the six drain leads on the top-side—approximately
0.0482 sq. in. 31.1 sq. mm—and vias added through to the
underside of the board, again with a maximized copper pad
area of approximately the board-size dimensions. The outer
package outline is for the 8-pin DIP, which will allow test
sockets to be used to assist in testing.
The thermal performance of the 1206-8 on this board has been
measured with the results following on the next page. The
testing included comparison with the minimum recommended
footprint on the evaluation board-size pcb and the industry
standard one-inch square FR4 pcb with copper on both sides
of the board.
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI5402DC-T1-GE3 | 功能描述:MOSFET 30V 6.7A 2.5W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5402DC-T2 | 功能描述:MOSFET 30V 6.7A 2.5W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5402DC-T3 | 功能描述:MOSFET 30V 6.7A 2.5W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5403DC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI5403DC-T1-GE3 | 功能描述:MOSFET 30V 6.0A 6.3W 30mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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