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| 型号： | SI5403DC-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 6A 1206-8 |
| 产品目录绘图： | DC-T1-E3 Series 1206-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 7.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 42nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1340pF @ 15V |
| 功率 - 最大： | 6.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 1206-8 ChipFET? |
| 包装： | 标准包装 |
| 产品目录页面： | 1664 (CN2011-ZH PDF) |
| 其它名称： | SI5403DC-T1-GE3DKR |
New Product
Si5403DC
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 30
R DS(on) ( Ω )
0.030 at V GS = - 10 V
0.044 at V GS = - 4.5 V
I D (A)
6 a
6 a
Q g (Typ.)
2 nC
? Halogen-free
? TrenchFET ? Power MOSFET
? 100 % R g Tested
RoHS
COMPLIANT
APPLICATIONS
? DC/DC Converter
1206-8 ChipFET
?
- Load Switch
- Adaptor Switch
1
S
D
D
D
D
D
G
D
S
G
Marking Code
BQ XXX
Lot Traceability
and Date Code
Part #
Bottom View
Code
D
Ordering Information: Si5403DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 30
± 20
- 6 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 85 °C
T A = 25 °C
T A = 85 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
- 5.8
- 6 a, b, c
- 5.2 b, c
- 20
- 5.3
- 2.1 b, c
6.3
A
Maximum Power Dissipation
T C = 85 °C
T A = 25 °C
P D
3.3
2.5 b, c
W
T A = 85 °C
1.3 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient b, f t ≤ 5s R thJA
Maximum Junction-to-Foot (Drain) Steady State R thJF
40 50
15 20
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 95 °C/W.
Document Number: 68643
S-81443-Rev. A, 23-Jun-08
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI5432DC-T1-GE3 | MOSFET N-CH 20V 6A 1206-8 |
| SI5440DC-T1-GE3 | MOSFET N-CH D-S 30V 1206-8 |
| SI5441DC-T1-GE3 | MOSFET P-CH D-S 20V 1206-8 |
| SI5443DC-T1-GE3 | MOSFET P-CH D-S 20V 1206-8 |
| SI5468DC-T1-GE3 | MOSFET N-CH D-S 30V 1206-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI5404BDC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) MOSFET |
| SI5404BDC_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) MOSFET |
| SI5404BDC-T1-E3 | 功能描述:MOSFET 20 Volt 7.5 Amp 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5404BDC-T1-GE3 | 功能描述:MOSFET 20V 7.5A 2.5W 28mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5404DC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Specification Comparison |
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