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| 型号： | SI5441DC-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH D-S 20V 1206-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 55 毫欧 @ 3.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 4.5V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 1206-8 ChipFET? |
| 包装： | 带卷 (TR) |
Si5441DC
Vishay Siliconix
P-Channel 2.5 V (G-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
0.055 at V GS = - 4.5 V
I D (A)
- 5.3
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
- 20
0.06 at V GS = - 3.6 V
0.083 at V GS = - 2.5 V
- 5.1
- 4.3
11
? 2.5 V Rated
? Compliant to RoHS Directive 2002/95/EC
1206-8 ChipFET ?
1
D
D
D
D
D
S
D
S
G
Markin g Code
BA XX
Lot Tracea b ility
G
and Date Code
Part # Code
Bottom V ie w
D
Orderin g Information: Si5441DC-T1-E3 (Lead (P b )-free)
Si5441DC-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
- 20
± 12
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
- 5.3
- 3.8
- 20
- 3.9
- 2.8
A
Continuous Source Current a
I S
- 2.1
- 1.1
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 85 °C
P D
T J , T stg
2.5
1.3
- 55 to 150
260
1.3
0.7
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
t ≤ 5s
Steady State
R thJA
40
80
50
95
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R thJF
15 20
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71055
S10-0210-Rev. E, 25-Jan-10
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI5441DC-T1-GE3 | 功能描述:MOSFET 20V 5.3A 2.5W 55mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5442DU-T1-GE3 | 功能描述:MOSFET 20V 10mOhm@4.5V 25A N-Ch RoHS:否 制造商:Vishay Semiconductors 晶体管极性:N-Channel 汲极/源极击穿电压:20 V 闸/源击穿电压:+/- 8V 漏极连续电流:25 A 电阻汲极/源极 RDS（导通）:10 mOhms 配置:Single 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:PowerPAK ChipFET-8 Single 封装:Reel |
| SI5443DC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 2.5-V (G-S) MOSFET |
| SI5443DC-T1 | 功能描述:MOSFET 20V 4.9A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5443DC-T1-E3 | 功能描述:MOSFET 20V 4.9A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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