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参数资料
| 型号： | SI5504DC-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 30V CHIPFET 1206-8 |
| 产品目录绘图： | DC-T1-E3 Series 1206-8 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A，2.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 2.9A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.5nC @ 10V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 1206-8 ChipFET? |
| 包装： | 标准包装 |
| 产品目录页面： | 1666 (CN2011-ZH PDF) |
| 其它名称： | SI5504DC-T1-E3DKR |
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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相关代理商/技术参数 |
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| SI5504DC-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI5504DC-T1-GE3 | 功能描述:MOSFET N/P-CH 30V CHIPFET 1206-8 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:TrenchFET® 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| SI5509DC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET |
| SI5509DC_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 20-V (D-S) MOSFET |
| SI5509DC-T1-E3 | 功能描述:MOSFET N-AND P-CH 20V(D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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