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| 型号： | SI5933DC-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 6/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL P-CH 20V 2.7A 1206-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 2.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.7nC @ 4.5V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 1206-8 ChipFET? |
| 包装： | 带卷 (TR) |
AN812
Vishay Siliconix
Dual-Channel 1206-8 ChipFET r Power MOSFET Recommended
Pad Pattern and Thermal Performance
INTRODUCTION
New Vishay Siliconix ChipFETs in the leadless 1206-8
package feature the same outline as popular 1206-8 resistors
and capacitors but provide all the performance of true power
semiconductor devices. The 1206-8 ChipFET has the same
footprint as the body of the LITTLE FOOT R TSOP-6, and can
be thought of as a leadless TSOP-6 for purposes of visualizing
board area, but its thermal performance bears comparison
with the much larger SO-8.
This technical note discusses the dual ChipFET 1206-8
pin-out, package outline, pad patterns, evaluation board
layout, and thermal performance.
25 mil
18 mil
80 mil
10 mil
43 mil
PIN-OUT
FIGURE 2.
26 mil
Footprint With Copper Spreading
Figure 1 shows the pin-out description and Pin 1 identification
for the dual-channel 1206-8 ChipFET device. The pin-out is
similar to the TSOP-6 configuration, with two additional drain
pins to enhance power dissipation and thus thermal
performance. The legs of the device are very short, again
helping to reduce the thermal path to the external heatsink/pcb
and allowing a larger die to be fitted in the device if necessary.
Dual 1206-8 ChipFET
S 1
G 1
S 2
G 2
The pad pattern with copper spreading shown in Figure 2
improves the thermal area of the drain connections (pins 5 and
6, pins 7 and 8) while remaining within the confines of the basic
footprint. The drain copper area is 0.0019 sq. in. or
1.22 sq. mm. This will assist the power dissipation path away
from the device (through the copper leadframe) and into the
board and exterior chassis (if applicable) for the dual device.
The addition of a further copper area and/or the addition of vias
to other board layers will enhance the performance still further.
An example of this method is implemented on the Vishay
Siliconix Evaluation Board described in the next section
(Figure 3).
D 1
D 1
D 2
THE VISHAY SILICONIX EVALUATION
BOARD FOR THE DUAL 1206-8
D 2
FIGURE 1.
For package dimensions see the 1206-8 ChipFET package
outline drawing ( http://www.vishay.com/doc?71151 ).
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in Application
Note 826, Recommended Minimum Pad Patterns With Outline
Drawing Access for Vishay Siliconix MOSFET s,
( http://www.vishay.com/doc?72286 ). This is sufficient for low
power dissipation MOSFET applications, but power
semiconductor performance requires a greater copper pad
area, particularly for the drain leads.
Document Number: 71127
12-Dec-03
The dual ChipFET 1206-08 evaluation board measures 0.6 in
by 0.5 in. Its copper pad pattern consists of an increased pad
area around each of the two drain leads on the top-side—
approximately 0.0246 sq. in. or 15.87 sq. mm—and vias
added through to the underside of the board, again with a
maximized copper pad area of approximately the board-size
dimensions, split into two for each of the drains. The outer
package outline is for the 8-pin DIP, which will allow test
sockets to be used to assist in testing.
The thermal performance of the 1206-8 on this board has been
measured with the results following on the next page. The
testing included comparison with the minimum recommended
footprint on the evaluation board-size pcb and the industry
standard one-inch square FR4 pcb with copper on both sides
of the board.
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI5935CDC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET |
| SI5935CDC-T1-E3 | 功能描述:MOSFET 20V 4.0A 3.1W 100mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5935CDC-T1-GE3 | 功能描述:MOSFET 20V 4A 3.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI5935DC | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 1.8-V (G-S) MOSFET |
| SI5935DC-T1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 1.8-V (G-S) MOSFET |
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