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参数资料
| 型号： | SI5935DC-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL P-CH 20V 1206-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 86 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.5nC @ 4.5V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | 1206-8 ChipFET? |
| 包装： | 带卷 (TR) |
Si5935DC
Vishay Siliconix
Dual P-Channel 1.8 V (G-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.086 at V GS = - 4.5 V
0.121 at V GS = - 2.5 V
0.171 at V GS = - 1.8 V
I D (A)
- 4.1
- 3.4
- 2.9
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFETs
? Low R DS(on) Dual and Excellent Power
Handling in a Compact Footprint
? Compliant to RoHS Directive 2002/95/EC
1206-8 ChipFET ?
1
APPLICATIONS
? Load Switch
? PA Switch
D 1
S 1
G 1
Marking Code
? Battery Switch
S 1
S 2
D 1
S 2
DF XX
Lot Traceability
D 2
D 2
G 2
and Date Code
Part # Code
G 1
G 2
Bottom View
Ordering Information: Si5935DC-T1-E3 (Lead (Pb)-free)
D 1
D 2
Si5935DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
P-Channel MOSFET
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
- 20
±8
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
- 4.1
- 2.9
- 15
-3
- 2.2
A
Continuous Source Current (Diode Conduction) a
I S
- 1.8
- 0.9
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 85 °C
P D
T J , T stg
2.1
1.1
- 55 to 150
260
1.1
0.6
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
Steady State
R thJA
R thJF
50
90
30
60
110
40
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72220
S10-0936-Rev. C, 19-Apr-10
www.vishay.com
1
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