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参数资料
| 型号： | SI6463DQ |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 8800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TSSOP-8 |
| 文件页数： | 1/5页 |
| 文件大小： | 97K |
| 代理商： | SI6463DQ |
April 2001
2001 Fairchild Semiconductor Corporation
Si6463DQ Rev. A(W)
Si6463DQ
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
Load switch
Motor drive
DC/DC conversion
Power management
Features
–8.8 A, –20 V. RDS(ON) = 0.0125
@ V
GS = –4.5 V
RDS(ON) = 0.018
@ V
GS = –2.5 V
Extended VGSS range (
±12V) for battery
applications
Low gate charge
High performance trench technology for extremely
low RDS(ON)
Low profile TSSOP-8 package
D
S
G
D
S
D
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
– Continuous
(Note 1)
–8.8
A
– Pulsed
–50
PD
Power Dissipation
(Note 1a)
1.3
W
(Note 1b)
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
96
°C/W
(Note 1b)
208
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
6463
Si6463DQ
13’’
16mm
3000 units
Si6463DQ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI6463DQ-T1 | 功能描述:MOSFET 20V 7.5A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI6463DQ-T1-E3 | 功能描述:MOSFET 20V 7.5A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI6465DQ-T1 | 功能描述:MOSFET 8V 8.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI6465DQ-T1-E3 | 功能描述:MOSFET 8V 8.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI6465DQ-T1-GE3 | 功能描述:MOSFET 8.0V 8.8A 1.5W 12mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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