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参数资料
| 型号： | SI6463DQ |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 8800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TSSOP-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 97K |
| 代理商： | SI6463DQ |
Si6463DQ Rev. A(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250
A
–20
V
BVDSS
T
J
Breakdown Voltage Temperature
Coefficient
ID = –250
A, Referenced to 25°C
–12
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
A
IGSSF
Gate–Body Leakage, Forward
VGS = –12 V,
VDS = 0 V
–100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = 12 V,
VDS = 0 V
100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250
A
–0.6
–0.8
–1.5
V
VGS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
ID = –250
A, Referenced to 25°C
3.5
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –8.8 A
VGS = –2.5 V,
ID = –7.2 A
VGS = –4.5 V, ID = –8.8 A, TJ= 125
°C
10
14
13
12.5
18
19
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–50
A
gFS
Forward Transconductance
VDS = –10 V,
ID = –8.8 A
46
S
Dynamic Characteristics
Ciss
Input Capacitance
5045
pF
Coss
Output Capacitance
1035
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
549
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
8
16
ns
tr
Turn–On Rise Time
14
25
ns
td(off)
Turn–Off Delay Time
130
208
ns
tf
Turn–Off Fall Time
VDD = –10 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6
80
128
ns
Qg
Total Gate Charge
41
66
nC
Qgs
Gate–Source Charge
7
nC
Qgd
Gate–Drain Charge
VDS = –10 V,
ID = –8.8 A,
VGS = –4.5 V
11
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.2
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –1.2 A (Note 2)
–0.6
–1.2
V
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 96°C/W (steady state) when mounted on a 1 inch copper pad on FR-4.
b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
Si6463DQ
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| SI6463DQ-T1 | 功能描述:MOSFET 20V 7.5A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| SI6465DQ-T1-GE3 | 功能描述:MOSFET 8.0V 8.8A 1.5W 12mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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