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| 型号： | SI6969BDQ-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL G-S 12V 8TSSOP |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 4.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 800mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 4.5V |
| 功率 - 最大： | 830mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 带卷 (TR) |
Si6969BDQ
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
- 0.45
- 0.8
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = - 9.6 V, V GS = 0 V
V DS = - 9.6 V, V GS = 0 V, T J = 70 °C
V DS - 8 V, V GS = - 4.5 V
V GS = - 4.5 V, I D = - 4.6 A
- 30
0.024
± 100
-1
- 25
0.030
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 3.8 A
0.031
0.040
Ω
V GS = - 1.8 V, I D = - 3.0 A
0.044
0.055
Forward Transconductance a
g fs
V DS = - 8 V, I D = - 4.6 A
18
S
Diode Forward Voltage
a
V SD
I S = - 1.25 A, V GS = 0 V
- 0.68
- 1.1
V
Dynamic b
Total Gate Charge
Q g
16.5
25
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q gs
Q gd
t d(on)
t r
V DS = - 6 V, V GS = - 4.5 V, I D = - 4.6 A
V DD = - 6 V, R L = 6 Ω
2
4.7
20
35
40
60
nC
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
t d(off)
t f
t rr
I D ? - 1.0 A, V GEN = - 4.5 V, R G = 6 Ω
I F = - 1.25 A, dI/dt = 100 A/μs
110
90
100
180
150
200
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
V GS = 5 thru 2.5 V
30
T C = - 55 °C
24
2V
24
25 °C
125 °C
18
12
6
0
1.5 V
18
12
6
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72017
S-81221-Rev. C, 02-Jun-08
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI6969DQ | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 1.8-V (G-S) MOSFET |
| SI6969DQ-T1 | 功能描述:MOSFET 12V 4.6A 1.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI6969DQ-T1-E3 | 功能描述:MOSFET 12V 4.6A 1.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI6969DQ-T1-GE3 | 功能描述:MOSFET 12V 4.6A 1.1W 34mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI6973DQ | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 1.8-V (G-S) MOSFET |
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