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| 型号： | SI7107DN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 9.8A 1212-8 |
| 产品目录绘图： | DN-T1-E3 Series 1212-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10.8 毫欧 @ 15.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 450µA |
| 闸电荷(Qg) @ Vgs： | 44nC @ 4.5V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 标准包装 |
| 产品目录页面： | 1664 (CN2011-ZH PDF) |
| 其它名称： | SI7107DN-T1-GE3DKR |
Si7107DN
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
0.0108 at V GS = - 4.5 V
I D (A)
- 15.3
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET: 1.8 V Rated
- 20
0.015 at V GS = - 2.5 V
0.020 at V GS = - 1.8 V
- 13.0
- 11.2
? Ultra Low On-Resistance for Increased
Battery Life
? New PowerPAK ? Package
- Low Thermal Resistance, R thJC
- Low 1.07 mm Profile
PowerPAK 1212-8
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
3.30 mm
1
S
S
3.30 mm
? Load/Power Switching in Portable Devices
2
3
S
G
S
4
D
8
7
D
D
G
6
D
5
Bottom View
Ordering Information: Si7107DN-T1-E3 (Lead (Pb)-free)
D
Si7107DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
- 20
±8
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
- 15.3
- 12.2
- 40
- 9.8
- 7.8
A
Continuous Source Current (Diode Conduction) a
I S
- 3.2
- 1.3
Soldering Recommendations (Peak Temperature)
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
b, c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
3.8
2.4
- 55 to 150
260
1.5
1.0
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
24
65
1.9
33
81
2.4
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73041
S10-0347-Rev. E, 15-Feb-10
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI7110DN-T1-GE3 | MOSFET N-CH 20V 13.5A 1212-8 |
| SI7115DN-T1-E3 | MOSFET P-CH D-S 150V PPAK 1212-8 |
| SI7120DN-T1-GE3 | MOSFET N-CH 60V 6.3A 1212-8 |
| SI7123DN-T1-GE3 | MOSFET P-CH 20V 10.2A 1212-8 |
| SI7129DN-T1-GE3 | MOSFET P-CH D-S 30V 1212-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7108DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) Fast Switching MOSFET |
| SI7108DN-T1-E3 | 功能描述:MOSFET 20V 22A 0.0049Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7108DN-T1-GE3 | 功能描述:MOSFET 20V 22A 3.8W 4.9mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7110DN-T1-E3 | 功能描述:MOSFET 20V 21.1A 0.0053Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7110DN-T1-GE3 | 功能描述:MOSFET 20V 21.1A 3.8W 5.3mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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