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| 型号： | SI7115DN-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH D-S 150V PPAK 1212-8 |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 295 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 42nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1190pF @ 50V |
| 功率 - 最大： | 52W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 带卷 (TR) |
Si7115DN
Vishay Siliconix
P-Channel 150 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
? Halogen-free According to IEC 61249-2-21
V DS (V)
- 150
R DS(on) ( ? )
0.295 at V GS = - 10 V
0.315 at V GS = - 6 V
I D (A)
- 8.9 e
- 8.6 e
Q g (Typ.)
23.2 nC
Definition
? TrenchFET ? Power MOSFET
? Low Thermal Resistance PowerPAK ?
Package with Small Size and Low 1 mm
Profile
? 100 % R g and UIS Tested
PowerPAK 1212-8
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
3.30 mm
1
S
2
S
S
3.30 mm
? Active Clamp in Intermediate DC/DC Power Supplies
? H-Bridge High Side Switch for Lighting Application
3
4
G
8
D
7
D
D
S
6
5
D
G
Bottom V ie w
Orderin g Information:
Si7115D N -T1-E3 (Lead (P b )-free)
Si7115D N -T1-GE3 (Lead (P b )-free and Halogen-free)
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise note d)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 150
± 20
- 8.9
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
- 7.1
- 2.3 a, b
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
- 1.9 a, b
- 15
- 13
- 3 a, b
15
11.25
A
mJ
T C = 25 °C
52
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
33
3.7 a, b
W
T A = 70 °C
2.4 a, b
Soldering Recommendations (Peak Temperature)
Operating Junction and Storage Temperature Range
c, d
T J , T stg
- 50 to 150
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Based on T C = 25 °C.
Document Number: 73864
S11-1908-Rev. C, 26-Sep-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7115DN-T1-GE3 | 功能描述:MOSFET 150V 8.9A 52W 295mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7116DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) Fast Switching MOSFET |
| SI7116DN-T1-E3 | 功能描述:MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7116DN-T1-GE3 | 功能描述:MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7117DNT1E3 | 制造商:VISHAY 功能描述:Pb Free |
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